A general strategy for high-throughput experimental screening of promising bulk thermoelectric materials

He, Shiyang; Yang, Yang; Li, Zhili; Zhang, Jiye; Wang, Chenyang; Zhang, Wenqing; Luo, Jun

doi:10.1007/s40843-020-1568-5

Cited by 10 publications

(9 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…8 One is to maximize the PF by optimizing the carrier concentration via doping or band engineering, 9 while another one targets seeking materials or processes to minimize the thermal conductivity. 10 As a prominent TE material candidate in the moderate temperature region, half-Heusler (HH) compounds have attracted signicant attention due to their low cost, high thermal stability, and mechanical robustness, as well as their excellent electrical properties. 11 The bandgap of HH compounds varies from 0.1 to 3.7 eV based on the composition.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improving the thermoelectric performance of ZrNi(In,Sb)-based double half-Heusler compounds

Bahrami

Ying

et al. 2022

J. Mater. Chem. A

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improving the thermoelectric performance of ZrNi(In,Sb)-based double half-Heusler compounds

Bahrami

Ying

et al. 2022

J. Mater. Chem. A

Self Cite

View full text Add to dashboard Cite

show abstract

“…Thermoelectric (TE) materials, which are amenable to direct thermal-to-electrical energy conversion based on the Seebeck or Peltier effects, play an essential role in a global sustainable energy solution to the impending energy problem and environmental degradation. [1,2] The primary goal of enhancing the TE performance of a material is to improve the dimensionless figure of merit, zT, which can be presented by the formula zT = S 2 σ(κ ele +κ lat ) -1 T, where S, σ, κ ele , κ lat , and T are the Seebeck coefficient, electrical conductivity, electrical thermal conductivity, lattice thermal conductivity, and absolute temperature, respectively. [3][4][5] To achieve high conversion efficiency, the TE material must have a high power factor (S 2 σ), as well as low total thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Effect of Powder ALD Interface Modification on the Thermoelectric Performance of Bismuth

Bahrami

Zhang

et al. 2021

Adv Materials Technologies

Self Cite

View full text Add to dashboard Cite

In thermoelectric materials, phase boundaries are crucial for carrier/phonon transport. Manipulation of carrier and phonon scatterings by introducing continuous interface modification has been shown to improve thermoelectric performance. In this paper, a strategy of interface modification based on powder atomic layer deposition (PALD) is introduced to accurately control and modify the phase boundary of pure bismuth. Ultrathin layers of Al2O3, TiO2, and ZnO are deposited on Bi powder by typically 1–20 cycles. All of the oxide layers significantly alter the microstructure and suppressed grain growth. These hierarchical interface modifications aid in the formation of an energy barrier by the oxide layer, resulting in a substantial increase in the Seebeck coefficient that is superior to that of most pure polycrystalline metals. Conversely, taking advantage of the strong electron and phonon scattering, an exceptionally large decrease in thermal conductivity is obtained. A maximum figure of merit, zT, of 0.15 at 393 K and an average zT of 0.14 at 300–453 K were achieved in 5 cycles of Al2O3‐coated Bi. The ALD‐based approach, as a practical interfacial modification technique, can be easily applied to other thermoelectric materials, which can contribute to the development of high‐performance thermoelectric materials of great significance.

show abstract

“…On the other hand, the environmental compatibility, raw material cost and service performance of thermoelectric materials have aroused great attention in recent years. [7][8] Ideal thermoelectric materials not only should possess high thermoelectric performance, but also meet the requirements of non-toxic, good chemical stability, and thermal stability in practical applications. [9][10][11][12][13][14][15] Nowadays, many tellurides have been developed as state-of-the-art thermoelectric materials, such as Bi 2 Te 3 , PbTe, SnTe and GeTe-AgSbTe 2 .…”

Section: Introductionmentioning

confidence: 99%

Role of Pb Doping on the Thermoelectric Properties of Mg₃Sb_1.8‐yBi_0.2Pb_y Alloys

Zhu

et al. 2022

ChemNanoMat

View full text Add to dashboard Cite

In this work, we focused on the matrix material with a composition of Mg 3 Sb 1.8 Bi 0.2 . The effect of Pb doping on the thermoelectric properties of Mg 3 Sb 1.8-y Bi 0.2 Pb y (y = 0, 0.005, 0.01, 0.02) compounds was investigated. Mechanical alloying followed by spark plasma sintering was employed to synthesize the corresponding bulk materials. The x-ray diffraction results indicate that the doping limit of Pb in Mg 3 Sb 1.8 Bi 0.2 is 0.01 ~0.02. Pb doping significantly increases the carrier concentration up to > 10 19 cm À 3 , while decreasing the Seebeck coefficient. Moreover, the thermal conductivity of the matrix material is reduced upon Pb doping at 400-700 K. As a result, the thermoelectric figure of merit is improved in the low-temperature range, and a ZT value of 0.039 is obtained for the y = 0.005 sample at 500 K, which is 77% higher than that of the undoped sample.

show abstract

A general strategy for high-throughput experimental screening of promising bulk thermoelectric materials

Cited by 10 publications

References 32 publications

Improving the thermoelectric performance of ZrNi(In,Sb)-based double half-Heusler compounds

Improving the thermoelectric performance of ZrNi(In,Sb)-based double half-Heusler compounds

Effect of Powder ALD Interface Modification on the Thermoelectric Performance of Bismuth

Role of Pb Doping on the Thermoelectric Properties of Mg₃Sb_1.8‐yBi_0.2Pb_y Alloys

Contact Info

Product

Resources

About

A general strategy for high-throughput experimental screening of promising bulk thermoelectric materials

Cited by 10 publications

References 32 publications

Improving the thermoelectric performance of ZrNi(In,Sb)-based double half-Heusler compounds

Improving the thermoelectric performance of ZrNi(In,Sb)-based double half-Heusler compounds

Effect of Powder ALD Interface Modification on the Thermoelectric Performance of Bismuth

Role of Pb Doping on the Thermoelectric Properties of Mg3Sb1.8‐yBi0.2Pby Alloys

Contact Info

Product

Resources

About

Role of Pb Doping on the Thermoelectric Properties of Mg₃Sb_1.8‐yBi_0.2Pb_y Alloys