A general design strategy for thermoelectric interface materials in n-type Mg3Sb1.5Bi0.5 single leg used in TEGs

Wu, Xinzhi; Han, Zhijia; Zhu, Yongbin; Deng, Biao; Zhu, Kang; Liu, Chengyan; Jiang, Feng; Liu, Weishu

doi:10.1016/j.actamat.2021.117616

Cited by 38 publications

(47 citation statements)

References 46 publications

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“…Shang et al used boron nitride coating on Mg 3 Sb 2– x Bi x to suppress volatilization. Other approaches included the annealing of samples in Mg vapors, as was reported by Wood et al or the use of various interface materials including 304 stainless steel …”

Section: Introductionmentioning

confidence: 99%

“…Shang et al 34 used boron nitride coating on Mg 3 Sb 2−x Bi x to suppress volatilization. Other approaches included the annealing of samples in Mg vapors, as was reported by Wood et al 34 or the use of various interface materials 35 including 304 stainless steel. 31 In our previous studies on Mg 2 Si-based, PbTe-based, and Te-based TE materials, interfacial diffusion barriers were developed to prepare Mg 2 Si/Mg 2 SiNi 3 , 36 PbTe/FeTe, 37 powders), and graphite paper.…”

Section: Introductionmentioning

confidence: 99%

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Suppression of Interfacial Diffusion in Mg₃Sb₂ Thermoelectric Materials through an Mg_4.3Sb₃Ni/Mg_3.2Sb₂Y_0.05/Mg_4.3Sb₃Ni-Graded Structure

Wang

Chen

Jiang

et al. 2022

ACS Appl. Mater. Interfaces

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The Zintl compound, n-type Mg3Sb2, has been extensively investigated as a promising thermoelectric material. However, performance degradation caused by the loss of Mg element during device preparation and service is a main disadvantage in its utilization in thermoelectric devices. To suppress volatilization, diffusion, or reaction of Mg, we designed a graded concentration junction to control the interfacial elemental diffusion and improve the stability of the thermoelectric joint. We utilized the reaction product at the Ni/Mg3.2Sb2Y0.05 interface, the phase Mg4.3Sb3Ni, as a barrier layer material, and prepared Mg4.3Sb3Ni/Mg3.2Sb2Y0.05/Mg4.3Sb3Ni junctions. The results show that the interface behavior of the thermoelectric junction is optimized by the gradation of elemental concentration, thermal expansion coefficient, and work function. The Mg4.3Sb3Ni/Mg3.2Sb2Y0.05/Mg4.3Sb3Ni single-leg device showed high thermal stability at 673 K for 20 days, the contact resistance was stable at around 10 μΩ cm2, and the shear strength was maintained at about 20 MPa. The conversion efficiency of its single-leg device maintains nearly 90% of the best performance after aging at 673 K for 20 days.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Suppression of Interfacial Diffusion in Mg₃Sb₂ Thermoelectric Materials through an Mg_4.3Sb₃Ni/Mg_3.2Sb₂Y_0.05/Mg_4.3Sb₃Ni-Graded Structure

Wang

Chen

Jiang

et al. 2022

ACS Appl. Mater. Interfaces

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“…Previously, we successfully designed ternary TEiMs (Fe 7 Mg 2 Cr and Fe 7 Mg 2 Ti) for Mg 3 Sb 2 ‐based TEcM using an alloying approach to balance a high σ s (45–50 MPa) and low ρ c (2–3 µΩ cm 2 ). [ 40 ] However, after aging at 400 °C for 15 d, a notable decrease in σ s to 40 MPa was observed, while ρ c increased to 7–8 µΩ cm 2 , suggesting that the thermal stability required further optimization, even though it was better than the previously reported results (Figure S1, Supporting Information). Hence, we further tuned the composition of the TEiM to optimize the high‐temperature thermal stability by slugging interdiffusion.…”

Section: Resultsmentioning

confidence: 75%

“…[ 25 ] For example, in our previous work, we selected Fe from 15 elements as the matrix element, considering the criteria of high σ s and low ρ c , and further designed two ternary alloys (Fe 7 Mg 2 Cr and Fe 7 Mg 2 Ti) with σ s > 40 MPa and ρ c < 5 µΩ cm 2 according to the above principles. [ 40 ]…”

Section: Introductionmentioning

confidence: 99%

Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg₃Sb_1.5Bi_0.5‐Based Thermoelectric Generation Devices

Lin

Han

et al. 2022

Advanced Energy Materials

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Realizing high‐temperature thermal stability in thermoelectric (TE) generators is a critical challenge. In this study, a synergistic interface and surface optimization strategy is implemented to enhance Mg3Sb1.5Bi0.5 TE generator performance by employing FeCrTiMnMg thermoelectric interface materials and the MgMn‐based alloy protective coating. The competitive output power density (ω) of 1.7 W cm−2 and a conversion efficiency (η) of 13% for the single‐leg device are achieved at hot‐side temperature (Th) and cold‐side temperature (Tc) of 500 and 5 °C, respectively. An ω of 0.8 W cm−2 and η of 6% for the two‐couple TE devices with p‐type commercial Bi2Te3 are also realized, values that are competitive with the commercial Bi2Te3 device. Additionally, the single‐leg device shows a high stable η for over 100 h when the Th and Tc are 400 and 5 °C, respectively, with an change rate (Δηmax/ηmax,o) of <3%. In situ transmission electron microscopy analysis further reveals that the high stability results from the effectively sluggish interdiffusion and reduced Mg evaporation that decrease the chemical potential gradient, reduce the saturated vapor pressure, and increase the diffusion activation energy barrier. This study provides a general technique route for boosting the high‐temperature thermal stability of TE generator.

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“…The reason why the contact resistivity of interface brazed by Ag72Cu28 is higher than Ag25CuZn and Ag10CuZn may be that when the Ag content rises, the Cu content in the solder decreases, as described in Section ; this circumvents the apparent diffusion reaction at the interface. However, according to the previous literature, − a certain degree of diffusion can enhance the interfacial bonding effect. Therefore, the interfacial bonding effect may become slightly weaker when the Ag content rises, which may be manifested as an increase in contact resistivity.…”

Section: Resultsmentioning

confidence: 87%

Bonding Performance of Ag–Cu Brazing Solders and Half-Heusler Alloys for High-Performance Thermoelectric Generators

Zhang

Niu

et al. 2022

ACS Appl. Mater. Interfaces

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Due to the uncertainty of the brazing solder composition and its unknown effect on the long-term stability of the interface, the brazing interface connection process for half-Heusler (hH) thermoelectric (TE) devices is still partially concealed and incomplete. In this work, we selected different types of Ag–Cu-based brazing solders with different Ag and Cu contents to assemble hH TE devices, observed the microstructure of the interface contact, and analyzed its formation mechanism. It is found that when the Cu element in the brazing solder is high, it tends to form an intermetallic compound (IMC) layer at the interface, which threatens the life of the device. On the contrary, when the content of the Ag element is high, the formation of the IMC layer will be avoided. Then, the long-term stability of the interface brazed by Ag72Cu28 with high Ag content was verified: the interface connection showed good contact resistivity stability and mechanical reliability; the fabricated uni-couple TE module achieved a maximum output power of 0.28 W and a maximum conversion efficiency of 7.34% at a temperature difference of 538 K. This work summarizes the selection principle of Cu–Ag-based brazing solder when assembling hH TE modules and verifies the long-term stability of the brazed connection interface. The experiment results can provide a reference for the actual fabrication of hH TE devices.

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A general design strategy for thermoelectric interface materials in n-type Mg3Sb1.5Bi0.5 single leg used in TEGs

Cited by 38 publications

References 46 publications

Suppression of Interfacial Diffusion in Mg₃Sb₂ Thermoelectric Materials through an Mg_4.3Sb₃Ni/Mg_3.2Sb₂Y_0.05/Mg_4.3Sb₃Ni-Graded Structure

Suppression of Interfacial Diffusion in Mg₃Sb₂ Thermoelectric Materials through an Mg_4.3Sb₃Ni/Mg_3.2Sb₂Y_0.05/Mg_4.3Sb₃Ni-Graded Structure

Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg₃Sb_1.5Bi_0.5‐Based Thermoelectric Generation Devices

Bonding Performance of Ag–Cu Brazing Solders and Half-Heusler Alloys for High-Performance Thermoelectric Generators

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A general design strategy for thermoelectric interface materials in n-type Mg3Sb1.5Bi0.5 single leg used in TEGs

Cited by 38 publications

References 46 publications

Suppression of Interfacial Diffusion in Mg3Sb2 Thermoelectric Materials through an Mg4.3Sb3Ni/Mg3.2Sb2Y0.05/Mg4.3Sb3Ni-Graded Structure

Suppression of Interfacial Diffusion in Mg3Sb2 Thermoelectric Materials through an Mg4.3Sb3Ni/Mg3.2Sb2Y0.05/Mg4.3Sb3Ni-Graded Structure

Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg3Sb1.5Bi0.5‐Based Thermoelectric Generation Devices

Bonding Performance of Ag–Cu Brazing Solders and Half-Heusler Alloys for High-Performance Thermoelectric Generators

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Suppression of Interfacial Diffusion in Mg₃Sb₂ Thermoelectric Materials through an Mg_4.3Sb₃Ni/Mg_3.2Sb₂Y_0.05/Mg_4.3Sb₃Ni-Graded Structure

Suppression of Interfacial Diffusion in Mg₃Sb₂ Thermoelectric Materials through an Mg_4.3Sb₃Ni/Mg_3.2Sb₂Y_0.05/Mg_4.3Sb₃Ni-Graded Structure

Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg₃Sb_1.5Bi_0.5‐Based Thermoelectric Generation Devices