A general analytical method for finding the quantum capacitance of graphene

Selvaggi, Jerry P.

doi:10.1007/s10825-018-1202-0

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2018

2024

Publication Types

Select...

Article6

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 8 publications

(2 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fermi-Dirac integrals play a key role in different problems in applied and theoretical physics. For a few examples in stellar astrophysics, plasma physics and electronics, see [1], [2], [15], [6], [21] and [24].…”

Section: Introductionmentioning

confidence: 99%

Complete asymptotic expansions for the relativistic Fermi-Dirac integral

Gil

Segura

Temme

2022

Applied Mathematics and Computation

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Complete asymptotic expansions for the relativistic Fermi-Dirac integral

Gil

Segura

Temme

2022

Applied Mathematics and Computation

View full text Add to dashboard Cite

“…This non-linear quantum relation can be linearized around an appropriate point. Now, by defining a potential U N which is the potential required to make the channel electrically neutral, the expression for n 0 becomes [9,29],…”

mentioning

confidence: 99%

Effect of size quantization and quantum capacitance on the threshold voltage of a 2D nanoscale dual gate MOSFET

Sundar

Sarkar

2020

Eng. Res. Express

View full text Add to dashboard Cite

The size quantization effect in the channel of a 2D nanoscale MOSFET is studied using a self-consistent quantum method. Under this, Schrodinger-Poisson equations are solved for determining the electron density for 2D device channels from 3 nm × 3 nm to 100 nm × 100 nm. The lower dimension channels show a peak of the electron density at the middle whereas higher dimension channels show the accumulation of the electrons at the oxide/semiconductor interface. Also, the role of quantum capacitance on the threshold voltages of these nanoscale devices is investigated as a function of channel dimensions and electron effective masses. It is observed that not only the size but the electron effective masses dominate the conductivity of the channel for such nanoscale devices. Here, the channel electron densities are obtained using density matrix formalism. A block diagonal Hamiltonian Matrix [H] is constructed for this oxide/channel/oxide 2D structure and the channel is discretized by using the finite-difference method. This analysis is important for understanding the physics of the size quantization and its effect on the threshold voltage.

show abstract

Conductivity modeling of organic materials with the Kubo–Greenwood integral and a Gaussian density of states

Selvaggi

2018

J Comput Electron

View full text Add to dashboard Cite

A general analytical method for finding the quantum capacitance of graphene

Cited by 8 publications

References 31 publications

Complete asymptotic expansions for the relativistic Fermi-Dirac integral

Complete asymptotic expansions for the relativistic Fermi-Dirac integral

Effect of size quantization and quantum capacitance on the threshold voltage of a 2D nanoscale dual gate MOSFET

Conductivity modeling of organic materials with the Kubo–Greenwood integral and a Gaussian density of states

Contact Info

Product

Resources

About