A gate drive circuit for silicon carbide JFET

Mino, K.; Herold, S.; Kolar, Johann W.

doi:10.1109/iecon.2003.1280217

Cited by 43 publications

(17 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The need to develop suitable gate or base drive in pursue of full utilization of the SiC JFET, MOSFET and BJT high speed capabilities has hence become apparent, where the major obstacle faced has been the different requests of SiC components. To solve this problem, several researches have been done to consider special attention which is required [15][16][17][18][19]. In the following section, different requests for driving SiC power devices and gate or base drives which have been developed and used for implementation of SiC matrix converter are presented.…”

Section: Experimental Arrangmentmentioning

confidence: 99%

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Safari

Castellazzi

Wheeler

2014

IEEE Trans. Power Electron.

115

View full text Add to dashboard Cite

Section: Experimental Arrangmentmentioning

confidence: 99%

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Safari

Castellazzi

Wheeler

2014

IEEE Trans. Power Electron.

115

View full text Add to dashboard Cite

“…Device turn-off is provided by D1 while R2/C1 generates a negative voltage to discharge the gate capacitances and thus aid in providing a faster turn-off. A good gate drive design [6] [7] is helpful is achieving excellent switching characteristics [8] for the SiC JFET. The waveforms in Fig.…”

Section: Gate Drive Designmentioning

confidence: 99%

On understanding and driving SiC power JFETs

Abuishmais

Basu²,

Undeland

2011

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies for driving them.

show abstract

“…This gate driver design will not limit the gate current to a low level under a gate avalanche condition and would likely destroy the device. Another gate driver incorporating avalanche current limiting is proposed in [7] and the authors compare the resulting JFET switching losses to the cascode driven by a MOSFET driver circuit. It was found that for the JFET only device the switching losses were reduced by 9% compared to the cascode.…”

Section: Sic Jfet Gate Drivermentioning

confidence: 99%

“…However for the SiC JFET a modified driver must be used since it is a normally-on device that typically requires a large negative bias to turn off. SiC JFET gate drivers have been previously presented [5]- [7], although in [5] this gate driver was not designed for production purposes and could not easily cope with the variable device-todevice JFET characteristics. An improved gate driver was reported in [7] that could cope with the varying JFET characteristics but reported only a 9% reduction in switching loss compared to using a SiC cascode with a standard gate driver.…”

Section: Introductionmentioning

confidence: 99%

“…SiC JFET gate drivers have been previously presented [5]- [7], although in [5] this gate driver was not designed for production purposes and could not easily cope with the variable device-todevice JFET characteristics. An improved gate driver was reported in [7] that could cope with the varying JFET characteristics but reported only a 9% reduction in switching loss compared to using a SiC cascode with a standard gate driver. In order to design the gate driver and a converter bridge leg the SiC JFET characteristics need to be fully determined.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter

Round

Heldwein

Kolar

et al.

Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005.

View full text Add to dashboard Cite

Silicon carbide (SiC) power semiconductor devices are capable of being operated at higher voltages, frequencies and temperatures than silicon power devices. These SiC device capabilities will provide the power electronics designer with new possibilities to produce compact designs. Presently the JFET is the only controlled turn off/on SiC device that is close to commercialization and available as restricted samples. However the JFET is a normally-on device that requires a negative gate voltage to turn off. In order to correctly design a gate driver one must understand the characteristics of the JFET. This paper presents a description of the JFET semiconductor structure, and the SiC JFET's static and dynamic characteristics from room temperature to 200°C. A SiC JFET gate driver circuit is presented and its performance described. The proposed gate driver improves the switching performance of the JFET by operating the gate in avalanche during the off time.

show abstract

A gate drive circuit for silicon carbide JFET

Cited by 43 publications

References 6 publications

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

On understanding and driving SiC power JFETs

A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter

Contact Info

Product

Resources

About