A Gate Drive Circuit for Dual N-type H-bridge Power Transistors

Abstract

A new grid driver of a high-side N-type switch tube is designed, which is easy to integrate. The circuit has the characteristics of low cost and fast speed and solves the problem of the unstable output voltage of a high-side switch tube when a low-side switch tube is not working in a traditional bootstrap circuit. The power supply voltage of the circuit is 30 V, including the voltage bias module, a high-level voltage shift circuit module, and a charge pump module. It can meet the driving requirements of a large size and high-side N-type switch tube. In this study, the 0.18 μm MGN process was used for design and simulation. The simulation results show that the grid driver has good driving ability.