A GaN-Integrated Galvanically Isolated Data Link Based on RF Planar Coupling With Voltage Combining for Gate-Driver Applications
Simone Spataro,
Egidio Ragonese,
Nunzio Spina
et al.
Abstract:In this paper the design of a galvanically isolated data link for gate-driver applications in GaN technology is presented. The isolation channel exploits the near-field RF planar coupling between micro-antennas placed on two side-by-side co-packaged chips. Adopted package-scale isolation has several benefits i.e., the applicability to any integration technology and the capability to achieve both very high isolation rating and common-mode transient immunity by means of a proper distance between chips. The isola… Show more
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