A GaN high power and efficient amplifier for L-Band Galileo system

Giofrè, Rocco; Colantonio, Paolo; Giannini, F.; González, Laura; Arriba, Francisco De; Cabria, L.; Baglieri, D.

doi:10.1109/inmmic.2015.7330362

Cited by 7 publications

(4 citation statements)

References 4 publications

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“…In comparison, the results of our proposed MPA is comparable to Giofré et al. [30] except for the output power; Giofré et al. developed an MPA for the L‐band space‐borne Galileo System in the E1 band.…”

Section: Realization and Evaluation Of Proposed Multistage Power Ampl...supporting

confidence: 70%

“…After a comparative analysis of HPA, we compared the performance of the proposed MPA with published data, as shown in Table 2. In comparison, the results of our proposed MPA is comparable to Giofré et al [30] except for the output power; Giofré et al developed an MPA for the L-band spaceborne Galileo System in the E1 band. Similarly, Garg et al [31] developed a class F MPA at 1.25 GHz with a 24% duty cycle for pulsed radar application.…”

Section: Comparison With Published Datasupporting

confidence: 65%

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Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Hayat¹,

Zafar

Mehmood³

et al. 2021

IET Circuits, Devices & Syst

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This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an MPA using GaN HEMT devices to achieve optimised parameters such as high gain, high power, better efficiency, and linearity in a compact size. In an MPA design with multiple stages, oscillations are common owing to unwanted high gain at the lower frequency range. To overcome this issue, we introduced interstage harmonic termination networks as a novel approach to suppress high gain at low frequencies, which are prone to oscillations. The proposed cascaded MPA provides the maximum radio-frequency output power of 89 W and a power gain of 52 dB with an associated power-added efficiency of 51%. Second and third harmonic levels are −32.5 and −37 dBc, respectively. Two-tone measurements are performed with a frequency separation of 10 MHz, and an intermodulation level of less than −33 dBc is achieved. | INTRODUCTIONPower amplifiers (PAs) are widely used in wireless communication and radar applications. Microwave frequencies (UHF, Lband, S-band etc.) have a dominant role in commercial and defence applications. Modern communication standards such as GSM, CDMA, W-CDMA, and WiMAX with digital modulation schemes, such as QAM, QPSK, DQPSK, OFDM, are characterised by varying signal envelopes with a high peak-toaverage power ratio [1,2]. To fulfil the requirements of communication standards, PA design includes the frequency of operation, output power, bandwidth, efficiency, gain, linearity, and cost. However, it is challenging to achieve optimum values of all parameters simultaneously [3,4]. Therefore, trade-offs must be made, and a subset of the desired parameters can be satisfied depending on the specific needs of the application. Some traditional trade-offs are gain versus bandwidth, operating frequency versus output power, and linearity versus efficiency [4]. In wireless communication, PA has the main role of amplifying the desired modulated signal before transmission [5]. Thus, multistage PAs (MPAs) are designed to accomplish the need for a link with high gain and high output power. In MPA design, a critical concern is the possibility of oscillations caused by instabilities including very high gain, positive feedback, resonant tanks, poor isolation between DC and radiofrequency (RF) paths, and parametric oscillations of nonlinear capacitances. These instabilities are particularly worse at lower frequencies owing to high gain, and detection to avoid such oscillations is always tedious [5,6].Gallium nitride (GaN), a wideband gap semiconductor, has emerged as a potential candidate to fulfil the requirements of current and future communication systems [7,8]. GaN high electron mobility transistor (HEMT)-based PAs provide a better trade-off with high output power with a compact size, owing to their high output power densities, compared with travelling wave tube amplifiers [9]. Gurdal et al. demonstrated GaN-based...

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Section: Realization and Evaluation Of Proposed Multistage Power Ampl...supporting

confidence: 70%

Section: Comparison With Published Datasupporting

confidence: 65%

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Hayat¹,

Zafar

Mehmood³

et al. 2021

IET Circuits, Devices & Syst

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“…Before designing the final modules required for the RFU implementation, a preliminary evaluation of the technology has been performed. For this purpose, several single ended prototypes based on 12 and 25.6 mm power bars have been designed, realized, and tested as detailed in [8, 9]. In particular, both PAs have been measured in CW operation evaluating their performance in terms of output power, efficiency, and junction temperature of the device ( T J ).…”

Section: Rfu Designs and Resultsmentioning

confidence: 99%

A high-power solid state amplifier for Galileo satellite system exploiting European GaN technology

Giofrè

Colantonio

Cipriani

et al. 2016

Int. J. Microw. Wireless Technol.

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This paper describes the development of an L-Band (f0= 1.575 GHz) high power and efficient solid state power amplifier (SSPA) designed for the European satellite navigation system (i.e. Galileo). The amplifier, developed in the framework of the European Project named SLOGAN, exploits the GH50-10 GaN technology available at United Monolithic Semiconductor foundry. The aim of the project is to offer, using as much as possible European technologies, a valid alternative to replace traveling wave tube amplifiers with more compact and reliable systems. All the SSPA functionalities, i.e. power supply, power conditioning and radio frequency amplification, are integrated in the developed architecture and accommodated in a single box with limited volume and mass. The required output power level is achieved by parallelizing several GaN die power bars of 12 and/or 25.6 mm. In continuous wave operating mode, the overall SSPA delivers an output power higher than 250 W at less than 2 dB of gain compression in the whole E1-band. Moreover, the registered gain and efficiency are higher than 67 dB and 54%, respectively.

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“…This is due to the fact that, in the past, solid-state power amplifiers (SSPAs) with comparable performance and reliability were not available. However, with the advent of highly reliable Gallium Nitride (GaN) processes, SSPA at the L and S bands can be efficiently adopted to replace TWTAs, with comparable output power and efficiency capability, yet smaller footprint, lighter weight and lower cost, which can introduce significant benefits for satellite applications [7][8][9][10].…”

mentioning

confidence: 99%

L‐band high power solid‐state power amplifier for aerospace usage

Yang

et al. 2022

Electronics Letters

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This work presents the design, implementation, and experimental results of an L-band solid-state power amplifier (SSPA) developed for the next generation high-power transmitter for the space usage. The microwave frequency nircuit (MFC) is realized by cascading a channel amplifier, a drive power amplifier (PA) and a high PA section. By utilizing the gallium nitride (GaN) HEMTs, the efficiency of the drive PA and high PA are improved to more than 70% over the frequency range from 1.45 to 1.55 GHz, which ensures an overall efficiency of the MFC higher than 66%. Then a high efficiency power-supply based on the phase-array bridge topology is proposed for voltage conversion and output sequence control, which delivers a high efficiency of about 94% at the rated power range. In the 100-MHz operating bandwidth, the SSPA delivers more than 200 W of output power with an associated 3rd order intermodulation product (IM3) and power added efficiency (PAE) better than −18 dBc and 60%, respectively. The gain can be varied from 25 to 56 dB with a minimal step of 0.5 dB through telecommand, whereas the phase can be adjusted within 360°range with a minimal step of 5.6°.

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A GaN high power and efficient amplifier for L-Band Galileo system

Cited by 7 publications

References 4 publications

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

A high-power solid state amplifier for Galileo satellite system exploiting European GaN technology

L‐band high power solid‐state power amplifier for aerospace usage

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