A GaN HEMT power amplifier with variable gate bias for envelope and phase signals

Cijvat, E.; Tom, Kevin; Faulkner, M.; Sjöland, Henrik

doi:10.1109/norchp.2007.4481050

Norchip 2007 2007

DOI: 10.1109/norchp.2007.4481050

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A GaN HEMT power amplifier with variable gate bias for envelope and phase signals

E. Cijvat

Kevin Tom

M. Faulkner

et al.

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Cited by 5 publications

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A comparison of polar transmitter architectures using a GaN HEMT power amplifier

Cijvat

Sjöland

Tom

et al. 2008

2008 15th IEEE International Conference on Electronics, Circuits and Systems

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A GaN HEMT power amplifier with variable gate bias for envelope and phase signals

Cited by 5 publications

References 10 publications

A comparison of polar transmitter architectures using a GaN HEMT power amplifier

A comparison of polar transmitter architectures using a GaN HEMT power amplifier

Autonomous Biasing Circuit for GaN RF Amplifiers

Two 130nm CMOS class-D RF power amplifiers suitable for polar transmitter architectures

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