A GaN-Based Active Diode Circuit for Low-Loss Rectification

Basler, Michael; Reiner, Richard; Moench, Stefan; Waltereit, Patrick; Quay, R.; Kallfass, Ingmar; Ambacher, O.

doi:10.23919/ispsd50666.2021.9452218

Cited by 2 publications

(5 citation statements)

References 6 publications

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“…For the ratio between the on-resistance of the main and mirror transistor k = RON,Q1/RON,Q2 ≤ 1/100 should apply and the sense resistor should be highly resistive, e.g. 10 kΩ, which already described in a work of the author [37]. With this dimensioning, Q2 has only a small influence on the sense path.…”

Section: B Controlmentioning

confidence: 94%

“…The platform with building blocks is presented in [36]. A first hybrid design was published in [37]. The active diode consists of the three parts: power switch, control and voltage supply generation, which are shown in Fig.…”

Section: Gan Power Ic Designmentioning

confidence: 99%

“…The advantage compared to other concepts is the simplicity of the commongate stage, which causes hysteresis without complex highgain amplifiers such as operational amplifiers or comparators. The input network consisting of a sense transistor and resistor also enables the use in mains applications, which was also presented (not monolithically integrated) by the author in [37] and a patent application was filed by the author in [58]. The author's novel approach combines the advantages of voltage and current detection with a simple readout circuit.…”

Section: B Controlmentioning

confidence: 99%

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GaN Active Rectifier Diode

Basler

Reiner

Moench

et al. 2022

IEEE Open J. Power Electron.

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Active or synchronous rectification is used today to further increase the efficiency of mass-market power supplies by eliminating the turn-on voltage of rectifier diodes, thus reducing conduction losses. However, the active rectification is usually realized by two devices: a power MOSFET and a control circuit to imitate an ideal diode behavior. This paper presents a GaN active rectifier diode consisting of a 600 V power transistor, a control circuit with gate driver, and a supply generation, all monolithically realized in a GaN power integrated circuit (IC). This enables a true two-terminal device that can directly replace a rectifier diode. In order to evaluate the proposed conduction loss reduction by replacing a rectifier diode by an active diode, the theoretical limits at circuit level and at semiconductor level are analyzed. The GaN active rectifier diode is demonstrated in a half-wave rectification (110/230 VAC, 50/60 Hz) up to a forward current of 6 A. A single-device realization of low-loss GaN active rectifier diodes is more cost-efficient than a multi-chip or package-integrated solution.

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Section: B Controlmentioning

confidence: 94%

Section: Gan Power Ic Designmentioning

confidence: 99%

Section: B Controlmentioning

confidence: 99%

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GaN Active Rectifier Diode

Basler

Reiner

Moench

et al. 2022

IEEE Open J. Power Electron.

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“…The gate width is proportional to the chip area and inversely proportional to the on-resistance R ON of the power transistor. The optimal gate width ratio k G,OPT was analyzed and derived in [11], depending on the duty cycle of a buck converter DC = V OUT /V IN in steady state with continuous conduction mode (CCM) or critical conduction mode (CRM) only for the conduction losses. The function is given by [11]:…”

Section: Half-bridgementioning

confidence: 99%

“…Commercial 80 V GaN power stages from EPC are already on the market, which integrate drivers, level shifter, logic and under-voltage lockout (UVLO) in addition to the half-bridge on a chip [8]. EPC's portfolio also includes standard monolithic low-voltage half-bridges [4], and many more are published in different voltage classes (see review in [9]) or also by the authors [10,11]. Furthermore, there is some research in the area of half-bridge driver integration including a level shifter, for example, in [12][13][14][15], and many more without level shifters.…”

Section: Introductionmentioning

confidence: 99%

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

Basler,

Mönch,

Reiner

et al. 2024

Electronics

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In this article, a fully monolithically integrated GaN power stage with a half-bridge, driver, level shifter, dead time and voltage mode control for 48 V DC–DC converters is proposed and analyzed. The design of the GaN IC is presented in detail, and measurements of the single function blocks and the DC–DC converter up to 48 V are shown. Finally, considerations are given on a life cycle assessment with regard to the GaN power integration. This GaN power IC or stage demonstrates a higher level of integration, resulting in a reduced bill of materials and therefore lower climate impact.

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A GaN-Based Active Diode Circuit for Low-Loss Rectification

Cited by 2 publications

References 6 publications

GaN Active Rectifier Diode

GaN Active Rectifier Diode

Monolithically Integrated GaN Power Stage for More Sustainable 48 V DC–DC Converters

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