2001
DOI: 10.1109/16.918225
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A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns

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Cited by 152 publications
(63 citation statements)
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“…In addition to possessing a PCE of 29% which is the highest for any single junction PV cell [55], [73], GaAs cells are heat and radiation resistant. They possess a temperature coefficient p Max of 0% which means no performance loss with respect to temperature rise from STC [56], [57]. However, GaAs cells fail to dominate the market with just about 1% of the market share as seen in Fig.…”
Section: Gallium Arsenide (Gaas) Pv Cellmentioning
confidence: 99%
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“…In addition to possessing a PCE of 29% which is the highest for any single junction PV cell [55], [73], GaAs cells are heat and radiation resistant. They possess a temperature coefficient p Max of 0% which means no performance loss with respect to temperature rise from STC [56], [57]. However, GaAs cells fail to dominate the market with just about 1% of the market share as seen in Fig.…”
Section: Gallium Arsenide (Gaas) Pv Cellmentioning
confidence: 99%
“…This type of contact is an improvement of the conventional front-to-back contact [57], [92], [96], [128]. Both contacts are placed at the back of the cell which increases the surface of cell exposed to direct sunlight.…”
Section: Back/rear Contactsmentioning
confidence: 99%
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