A GaAs double-balanced dual-gate FET mixer IC for UHF receiver front-end applications

Kanazawa, K.; Kazumura, M.; Nambu, S.; Kano, G.; Teramoto, I.

doi:10.1109/t-ed.1985.22406

Cited by 3 publications

(4 citation statements)

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“…The double-balanced mixer circuit is featured because of good suppression of the RF and LO feedthroughs and even-order intermodulation products. 29 Theoretical analysis is given in Supporting Information. The schematic and photograph of the fabricated double-balanced mixer are shown in Figure 2a,b, respectively.…”

Section: Nano Lettersmentioning

confidence: 99%

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Double-Balanced Graphene Integrated Mixer with Outstanding Linearity

Lyu

Liu

et al. 2015

Nano Lett.

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A monolithic double-balanced graphene mixer integrated circuit (IC) has been successfully designed and fabricated. The IC adopted the cross-coupled resistive mixer topology, integrating four 500 nm-gate-length graphene field-effect transistors (GFETs), four on-chip inductors, and four on-chip capacitors. Passive-first-active-last fabrication flow was developed on 200 mm CMOS wafers. CMOS back-end-of-line processes were utilized to realize most fabrication steps followed by GFET-customized processes. Test results show excellent output spectrum purity with suppressed radio frequency (RF) and local oscillation (LO) signals feedthroughs, and third-order input intercept (IIP3) reaches as high as 21 dBm. The results are compared with a fabricated single-GEFT mixer, which generates IIP3 of 16.5 dBm. Stand-alone 500 nm-gate-length GFETs feature cutoff frequency 22 GHz and maximum oscillation frequency 20.7 GHz RF performance. The double-balanced mixer IC operated with off-chip baluns realizing a print-circuit-board level electronic system. It demonstrates graphene's potential to compete with other semiconductor technologies in RF front-end applications.

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Section: Nano Lettersmentioning

confidence: 99%

“…The double-balanced mixer circuit is featured because of good suppression of the RF and LO feedthroughs and even-order intermodulation products . Theoretical analysis is given in Supporting Information.…”

Section: Ic Fabricationmentioning

confidence: 99%

Double-Balanced Graphene Integrated Mixer with Outstanding Linearity

Lyu

Liu

et al. 2015

Nano Lett.

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“…(1) that the current includes only the odd times resultant frequency for RF and LO, which is an absolute advantage for fundamental mixing. [3] The analyze result is sensitive on the performance of balun. Therefore, the design of high performance balun is the key of the double balanced mixer.…”

Section: Circuit Designmentioning

confidence: 99%

A 2.5 to 7GHz wideband double-balanced mixer chip

Dai¹

2014

2014 IEEE International Conference on Communiction Problem-Solving

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A broadband GaAs MMIC double balanced mixer that works at frequency 2.5-7GHz was designed in this paper. The RF/LO frequency range is 2.5 to 7 GHz and the IF is DC to 3 GHz. This chip is fabricated on the 0.15μm pHEMT GaAs process which is offered by WIN semiconductor. The Marchand balun is used to provide the differential signals for the mixer. The chip successfully get a conversion loss less than 11dB and decent LO to IF isolation of nearly over 25dB.

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“…Concerning FET mixers, previous papers mostly concentrate on the intermodulation distortion characteristics, where third-order nonlinearity plays a role [12,17,18]. There has been no mention of spurious component characteristics due to higher-order harmonics of I and G.…”

Section: Introductionmentioning

confidence: 99%