A GaAs 16-kbit static RAM using dislocation-free crystal

Hirayama, M.; Togashi, M.; Kato, Naoki; Suzuki, M.; Matsuoka, Yutaka; Kawasaki, Yasuhiro

doi:10.1109/t-ed.1986.22445

Cited by 38 publications

(7 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Fig. 1(a), the history of III-V devices [7,8] is also plotted. It is noted that the slope for the developments of III-V devices is steeper in the late 1970's and the early 1980's than the trend of Moore's law.…”

Section: Introductionmentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…I), but they modify the electrical characteristics of GaAs when they are not from the columns III or V. Doping with the isoelectronic indium gives remarquable results for concentrations higher than 8 x 1019 at.cm-3 ; large S.I. GaAs single crystals have been grown, with zero dislocation which are suitable for device fabrication [12].…”

mentioning

confidence: 99%

Dislocation multiplication in GaAs : inhibition by doping

Djemel¹,

Castaing²,

Burle-Durbec³

et al. 1989

Rev. Phys. Appl. (Paris)

View full text Add to dashboard Cite

The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals is related to the thermoelastic modelling of stresses during growth. The dislocation structure in as-grown and annealed crystals is deduced, in particular with the help of the results of plastic deformation. The addition of various elements of the columns II-III-IV-V-VI in GaAs is considered and its influence on the establishment of the dislocation substructure is discussed

show abstract

“…This view is supported by the work of Hirayama et al, 10 who reported on the fabrication of 16 kbit stark RAMs comprising more than 10 5 FETs using In-alloyed "nearly dislocation-free" (<300/cnv 2 ) Substrates. However, the Overall quality is compromised by the large dislocation densities, varying 10 4 -10 5 / cm 2 .…”

Section: Introductionmentioning

confidence: 70%

Growth and Characterization of GaAs Single Crystals

Jordan¹,

Parsey²

1988

MRS Bull.

View full text Add to dashboard Cite

From a commercial viewpoint, gallium arsenide (GaAs) is currently the leading member of the III-V compound family. Oriented substrates, cut and polished from single-crystal boules, form the materials foundation for a rapidly maturing technology of high speed and high frequency electronic devices and circuits. The initial thrust of GaAs applications was in high powered lasers and light-emitting diodes (LEDs) fabricated on n-type (Si-doped) GaAs wafers grown by the horizontal Bridgman technique. One of the important benefits of using GaAs is the high electron mobility compared to Si. This property has driven the development of low noise and power field-effect transistors (FETs) for microwave applications. The semi-insulating substrate requirement (>107 Ω-cm) was initially met by chromium doping. Currently, the interest is focused on MMIC (microwave monolithic integrated circuits), MIMIC (millimeter microwave ICs), analog ICs for lightwave transmitters and receivers, and digital ICs. The digital circuits have been realized with ion-implanted FETs, selectively doped heterostructure transistors (SDHTs), and heterostructure bipolar transistors (HBTs). Presently, most of the semi-insulating (SI) material processed by the industry is nominally undoped, and grown by the liquid encapsulated Czochralski (LEC) technique. The SI behavior is attained via a delicate balance of deep EL2 donors and carbon acceptors, avoiding chromium in order to eliminate the anomalous out-diffusion and type-conversion associated with this dopant.GaAs wafers up to 4 inches in diameter, with electrical properties homogenized by whole ingot annealing, are currently available from U.S. domestic and overseas suppliers. However, the overall quality is compromised by the large dislocation densities, varying 104 – 105/cm2.

show abstract

A GaAs 16-kbit static RAM using dislocation-free crystal

Cited by 38 publications

References 4 publications

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Dislocation multiplication in GaAs : inhibition by doping

Growth and Characterization of GaAs Single Crystals

Contact Info

Product

Resources

About