A fully-integrated W-band imaging receiver IC in silicon-germanium BiCMOS technology

Abstract

A fully-integrated silicon-based 94-GHz direct-detection imaging receiver with on-chip Dicke switch and baseband circuitry is demonstrated. Fabricated in a 0.18-µm SiGe BiCMOS technology (f T /f MAX = 200 GHz), the receiver chip achieves a peak imager responsivity of 43 MV/W with a 3-dB bandwidth of 26 GHz. A balanced LNA topology with an embedded Dicke switch provides 30-dB gain and enables a temperature resolution of 0.3-0.4 K. Initial imaging measurements using the chip along with off-chip antennas are also presented. The imager chip consumes 200 mW from a single 1.8-V power supply.