A fully-integrated all-MOS 1.2 V low-dropout regulator for ultra-low power applications

Ren, Xinxin; Qiao, Shushan; Wang, Yulian; Wang, Yadong; Hu, Xiaoyu

doi:10.1016/j.aeue.2022.154409

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For portable electronics to be ultra-low-power always-on, a low-dropout (LDO) regulator must be used to reduce quiescent current and supply voltage [1] [2]. Analog LDO performs well in terms of anti-noise and transient response [3] [4].…”

Section: Introductionmentioning

confidence: 99%

A 540-mA, 0.0487-ps-FOM Digital LDO based on Bi-directional Binary Search with Dual-loop Control

Chen,

Chen

et al. 2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

A dual-loop digital low-dropout regulator based on the bi-directional binary search method is implemented in a 0.18-μm CMOS process in this paper. To improve the transient response, a bi-directional successive approximation register without initialization is proposed in coarse loop. To speed up fine adjustment during heavy loads, a two-dimensional MOSFET array is adopted to improve fine regulation step. Simulation results demonstrate that, during load current steps between 540 mA and 40 mA, the undershoot/overshoot is 364 mV/161 mV, and the digital LDO settles within 210 ns. For a supply voltage of 1.4 V with 200 mV dropout, the current efficiency is as high as 99.99% and the figure of merit is as low as 0.0487 ps.

show abstract