A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS

Jiang, Chen; Mostajeran, Ali; Han, Ruonan; Emadi, Mohammad Javad; Sherry, Hani; Cathelin, Andreia; Afshari, Ehsan

doi:10.1109/jssc.2016.2599533

Cited by 77 publications

(18 citation statements)

References 23 publications

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“…The pixel reported in this Letter delivers a total radiated power of −21.3 dBm and achieves a sensitivity of −79.5 dBm for a 1 kHz noise bandwidth through a patch antenna with −2.4 dB simulated gain at the measurement frequency of 260 GHz. This sensitivity is about 10 dB better than the best in the literature with only coherent RX pixels [1]. The performance of this pixel incorporating a TX and a coherent RX should be sufficient for imaging objects more than 10 m away when incorporated in a system with a 10 cm × 20 cm reflector, an intermediate frequency (IF) amplifier with a bandwidth of ∼45 MHz and a circuit to modulate the output frequency of the pixel.…”

Section: Introductionmentioning

confidence: 97%

“…Prior to this work, an eight‐element coherent RX array was demonstrated in Si–germanium (SiGe) heterojunction bipolar transistor (HBT) technologies [1]. LO generation and distribution are major challenges to scale up this array.…”

Section: Introductionmentioning

confidence: 99%

“…Incoherent detectors exhibit useful noise equivalent power (NEP = ∼10 pW/√Hz) and are used to form large‐scale arrays [4, 5]. Sub‐harmonic mixer (SHM)‐based coherent detection provides orders‐of‐magnitude superior equivalent NEP [1–3, 6, 7] and preserves phase information. However, circuits for coherent local oscillator (LO) generation and distribution require a large area and consume significant power.…”

Section: Introductionmentioning

confidence: 99%

“…Introduction: Imaging at millimetre-wave (mm-wave) to sub-mm-wave frequencies using silicon (Si) integrated circuits has been demonstrated [1][2][3][4][5][6][7]. Incoherent detectors exhibit useful noise equivalent power (NEP = ∼10 pW/√Hz) and are used to form large-scale arrays [4,5].…”

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confidence: 99%

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450 × 580 µm ² Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector

et al. 2018

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A transceiver pixel for active imaging incorporating a transmitter (TX) and a coherent receiver (RX) is demonstrated in 65 nm CMOS at 260 GHz. The pixel occupies an area of 450 × 580µm 2 and is the first demonstration of pixels incorporating a TX and a coherent RX which are smaller than λ/2 × λ/2. The pixel exhibits −21.3 dBm total radiated power and −79.5 dBm sensitivity at a 1 kHz noise bandwidth. This sensitivity is about 10 dB better than the state-of-the-art pixel with only a coherent RX. The pixel consumes 18.7 mW of DC power.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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450 × 580 µm ² Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector

et al. 2018

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“…In [3] the antenna gain is increased by using the substrate as a resonator with carefully milled slots in the substrate to overcome the dicing issue. [4] Increases both antenna gain and generated THz power by forming an coupled oscillator array. Though a very effective solution, this does come at a huge cost in area.…”

Section: Introductionmentioning

confidence: 99%

A 400-GHz 28-nm TX and RX With Chip-to-Waveguide Transitions Used in Fully Integrated Lensless Imaging System

Standaert

Reynaert

2019

IEEE Trans. THz Sci. Technol.

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This paper presents a 400 GHz CMOS TX and RX chip with two different chip-to-waveguide transitions. A first design is based on a coupled microstrip to waveguide coupler and is integrated together with a 400 GHz oscillator in 28 nm bulk CMOS. When this transmitter is combined with a micromachined horn antenna, it is capable of providing an EIRP of 1.26 dBm. In a second design, a folded dipole based coupler is utilized to make the transition between a waveguide and a 400 GHz mixer first receiver. This receiver fully integrates an on-chip LO, mixer and baseband circuits and achieves an effective conversion gain of 39 dB and a noise figure of 45 dB. Both chips are combined into a lensless active imaging setup with a spacial resolution of 2 mm.

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State-of-the-Art Millimeter-Wave Silicon Transceivers and Systems-on-Chip

Preez

Sinha

2022

Lecture Notes in Electrical Engineering

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A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS

Cited by 77 publications

References 23 publications

450 × 580 µm ² Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector

450 × 580 µm ² Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector

A 400-GHz 28-nm TX and RX With Chip-to-Waveguide Transitions Used in Fully Integrated Lensless Imaging System

State-of-the-Art Millimeter-Wave Silicon Transceivers and Systems-on-Chip

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A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS

Cited by 77 publications

References 23 publications

450 × 580 µm 2 Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector

450 × 580 µm 2 Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector

A 400-GHz 28-nm TX and RX With Chip-to-Waveguide Transitions Used in Fully Integrated Lensless Imaging System

State-of-the-Art Millimeter-Wave Silicon Transceivers and Systems-on-Chip

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Product

Resources

About

450 × 580 µm ² Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector

450 × 580 µm ² Pixel incorporating TX and coherent RX in CMOS for mm‐wave active imaging using a single reflector