A Four-Resonant-Tunneling-Diode (4RTD) NAND/NOR Logic Gate

Waho, Takao; Yamada, Akihisa; Okuyama, H.; Khorenko, V.; Do, T.; Prost, W.

doi:10.1109/iscas.2007.378238

Cited by 6 publications

(8 citation statements)

References 7 publications

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“…In addition to our works, various logic circuits using only RTDs, such as the Boolean logic family 7) and the 100 Gb/s operation of an SMOBILE flip-flop, 9) indicate that logic circuits using only RTDs have great potential for future high-speed VLSI logic applications.…”

Section: Discussionsupporting

confidence: 54%

“…Also, HEMTs or HBTs need a larger area than RTDs which results in a larger chip size for the overall circuit. 7) To solve this problem, logic circuits using only RTDs have been proposed. [7][8][9] For example, the Boolean logic family using four RTDs 7) and two Schottky diodes and three RTDs 8) was proposed and demonstrated.…”

Section: Introductionmentioning

confidence: 99%

“…7) To solve this problem, logic circuits using only RTDs have been proposed. [7][8][9] For example, the Boolean logic family using four RTDs 7) and two Schottky diodes and three RTDs 8) was proposed and demonstrated.…”

Section: Introductionmentioning

confidence: 99%

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Monostable-to-Bistable Transition Logic Element-Based Literal Gates Using Resonant Tunneling Diodes

Kim¹,

Seo²

2008

jjap

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We demonstrate the novel and compact implementation of literal gates with one literal window and two literal windows using only resonant tunneling diodes (RTDs). The proposed circuit consists of only three RTDs and one resistor for one literal window and four RTDs and one resistor for two literal windows, with the configuration of a series-connected RTD pair and a series-connected RTD and a resistor. The operation of the newly proposed literal gate is based on a monostable-to-bistable transition logic element (MOBILE). The RTD pair is used for the MOBILE core circuit and the RTD and resistor pair is used for current modulation. The circuit configuration is markedly reduced compared with conventional literal gates using complementary metal oxide semiconductor (CMOS) or previously reported RTD-based literal gates.

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Section: Discussionsupporting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

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Monostable-to-Bistable Transition Logic Element-Based Literal Gates Using Resonant Tunneling Diodes

Kim¹,

Seo²

2008

jjap

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“…However, in the previously reported MOBILE-based circuits, the transistors, which were used to modulate the peak current, have limited the full exploitation of the high-speed switching and low-power features of RTDs [4]. For example, MOBILE operation was demonstrated only up to 35 Gbit/s with about 2 mW power dissipation in spite of picoseconds level switching time of RTD [2].…”

Section: Introductionmentioning

confidence: 99%

“…Logic circuits using only RTDs in the 1960's [5] can be used to overcome these limits. For example, as an attempt to solve this problem, various logic circuits using only RTDs were proposed recently [4], [6]- [8]. Motivated by the previous results, we have proposed and demonstrated MOBILE circuits and multi-valued logic (MVL) circuits using only RTDs as active devices [9], [10].…”

Section: Introductionmentioning

confidence: 99%

40 Gbit/s Operation of MOBILE using Only RTDs and its Application to 2-bit Flash ADC

Kim

Lee

Kim

et al. 2008

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials

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Figure 1. (a) Circuit configuration of MOBILE using only RTDs. Series connected RTD pair (RTD A and RTD B) is used for monostable-to-bistable transition, and RTD-resistor pair (RTD C and R IN) is used for peak current modulation. (b) Circuit configuration of 2-bit flash ADC using only RTDs. Utilizing nonlinear foldback I-V characteristics of RTD, MSB and LSB signal can be implemented using the same circuit configuration with that of the MOBILE.

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