A flux controlled electronically tunable fully floating OTA based memristor emulator

Gözüküçük, Mustafa; Menekay, Serdar; Ozenli, Deniz

doi:10.1007/s10470-022-02074-3

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…Notably, the proposed memristor model is capable of operating at high frequencies. Memristor circuit models typically comprise numerous active and passive components, such as op-amps, current-feedback operational amplifiers, positive second-generation current conveyors (CCII+), differential difference current conveyors, analog multipliers, microcontroller units, and analog-to-digital/digital-to-analog converters [10][11][12][13][14]. In contrast to other high-frequency memristor models, our novel memristor model stands out for its superior flexibility, adjustability, and high operating frequency potential under ideal conditions.…”

Section: Simulation Results and Applicationmentioning

confidence: 99%

An ultra-high-frequency memristor circuit model

Wang,

Liu

et al. 2024

Semicond. Sci. Technol.

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In the context of sixth-generation (6G) wireless communications technology, advanced radio-frequency (RF) switches are required to accommodate high-frequency terahertz range and complex modulation techniques. This paper proposes a flexible charge-controlled memristor model specifically designed for ultra-high-frequency applications. It describes in detail the derivation of the behavior model of the proposed memristor circuit. The memristor circuit model is built around four inverters, two multipliers, one integrator, one adder, and one differentiator. Through PSPICE simulation, the typical hysteresis loop of the memristor is thoroughly analyzed, demonstrating its suitability for use in wireless communication systems. The model exhibits a good typical hysteresis loop that operates over a wide frequency range from 100 kHz to 20 THz, meeting the specific requirements of terahertz applications. Compared to existing memristor designs, it operates at a much higher frequency. However, the zero crossing of the typical hysteresis loop deviates when the operating frequency exceeds 20 THz. Furthermore, the proposed memristor model can be customized in terms of set/reset voltage, operating frequency and R_off⁄R_on , and has been verified for use in high speed switches with switching speeds of 19.5 ps. Furthermore, this research fills the gap in ultra-high-frequency memristor modeling, offering valuable insights and guidance for the utilization of memristors in the 6G technology and ultra-high frequency fields.

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Section: Simulation Results and Applicationmentioning

confidence: 99%

An ultra-high-frequency memristor circuit model

Wang,

Liu

et al. 2024

Semicond. Sci. Technol.

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A simple passive floating memristor emulator circuit

Wu,

Shi,

Huang

et al. 2024

AEU - International Journal of Electronics and Communications

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A New Nonlinear Ion Drift Model of Memristor Element and its Versatile Analog Reconfigurable Realizations

Randrianantenaina,

Baran,

Korkmaz

et al. 2023

J CIRCUIT SYST COMP

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While using polynomial functions to define window functions is an initial approach in studying the memristor element, it is susceptible to generating imaginary results. However, using window functions, including the trigonometric function, is a current field of research on the memristor element. This paper uses the trigonometric Blackman window function to present a new memristor element model and investigates its nonlinear ion drift model properties. The motivation of this study is the usage of the trigonometric Blackman window function, which presents a more detailed definition and leads to more accurate results in windowing operations. The Blackman window function can address the issues of border locking and terminal state. Numerical simulations have verified this proposed structure. Additionally, the analog realizations of the memristor element constructed with the Blackman window function have been achieved on a Field Programmable Analog Array, which offers fast prototyping, serving as an alternative approach for emulating memristors.

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A flux controlled electronically tunable fully floating OTA based memristor emulator

Cited by 3 publications

References 28 publications

An ultra-high-frequency memristor circuit model

An ultra-high-frequency memristor circuit model

A simple passive floating memristor emulator circuit

A New Nonlinear Ion Drift Model of Memristor Element and its Versatile Analog Reconfigurable Realizations

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