2024
DOI: 10.1039/d3nr06278c
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A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy

Zichen Chen,
Shuai Chen,
Tianhao Jiang
et al.

Abstract: Floating-gate organic filed-effect transistor (FG-OFET) memory is becoming a promising candidate for emerging nonvolatile memory applications due to the advantages of sophisticated data-storage mechanism and reliable long-term data retention capacity....

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Cited by 2 publications
(2 citation statements)
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“…OFGTs have become an indispensable part of non-volatile memory due to their unique data storage mechanism and persistent data retention capability. 115 They typically consist of a source, a drain, a gate, and a floating gate, as depicted in Fig. 2(d).…”
Section: Organic Artificial Synapsementioning
confidence: 99%
“…OFGTs have become an indispensable part of non-volatile memory due to their unique data storage mechanism and persistent data retention capability. 115 They typically consist of a source, a drain, a gate, and a floating gate, as depicted in Fig. 2(d).…”
Section: Organic Artificial Synapsementioning
confidence: 99%
“…With the advent of the internet of things (IoT) era, the utilization of intelligent devices has led to a substantial accumulation of data information, consequently elevating the demand for enhanced memory capacity. 1,2 Therefore, it is imperative to develop memory devices with augmented storage capabilities, robust retention, and multifunctionality. 3–5 Benefiting from the designability and flexibility of organic semiconductor materials, organic memory devices have garnered widespread attention and development to meet the ever-growing demand for high storage density.…”
Section: Introductionmentioning
confidence: 99%