A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers

Chang, Ming-Feng; Lee, Po-Tsung; McAlister, S.P.; Chin, Albert

doi:10.1063/1.3046115

Cited by 48 publications

(33 citation statements)

References 16 publications

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“…We used bottom-gate IGZO TFT NVM devices [7], [8]. A 500-nm wet oxide was grown on a 4-in Si wafer to mimic the glasslike insulator substrate [9].…”

Section: Methodsmentioning

confidence: 99%

“…An erase saturation that is due to trap-assisted gate leakage was found. However, this is inevitable even for high-temperature-formed high-κ blocking oxide [5], [6] and becomes worse at lower temperature [7]. During erase, the trapped electrons need to be removed over the tunnel oxide to lower V t ; alternatively, the minority holes in the depleted IGZO can tunnel into the trapping layer and annihilate the trapped electrons.…”

Section: Methodsmentioning

confidence: 99%

“…This is due to the degraded dielectric quality at low process temperatures. In this letter, we have fabricated the charge-trapping Flash of metal-oxide-nitride-oxide-semiconductor (MONOS) [3]- [7] NVM devices on IGZO. Unfortunately, a similar fast retention loss was found.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

Wang

Chin

2010

IEEE Electron Device Lett.

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We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/−12-V program/erase voltage, fast 1-ms/ 100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κ layers.Index Terms-Charge-trapping-engineered Flash (CTEF), high-κ, InGaZnO, metal-oxide-nitride-oxide-semiconductor (MONOS), nonvolatile memory (NVM).

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“…We used bottom-gate IGZO TFT NVM devices [7], [8]. A 500-nm wet oxide was grown on a 4-in Si wafer to mimic the glasslike insulator substrate [9].…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

Wang

Chin

2010

IEEE Electron Device Lett.

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“…A solution to lower the program and erase voltages is to use high-k dielectrics. Chang et al fabricated an OFET memory device containing HfLaO (20 nm), HfON (20 nm), and HfO 2 (6 nm) as blocking, charge trapping, and tunneling gate insulator layers, respectively [26]. The devices showed a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 hours.…”

Section: Floating Gate Ofet Memorymentioning

confidence: 99%

Nonvolatile memory devices based on organic field-effect transistors

Wang

Peng

et al. 2011

Chin. Sci. Bull.

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Among the many possible device configurations for organic memory devices, organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media. In this feature article, the recent progress in the classes of OFET-based memory, including floating gate OFET memory, polymer electret OFET memory, ferroelectric OFET memory and several other kinds of OFET memories with unique configurations, are introduced. Finally, the prospects and problems of OFETs memory are discussed. for realization of organic memory because of its nondestructive read-out, complementary integrated circuit architectural compatibility, and single transistor realization [19]. Recently, Sekitani et al. fabricated nonvolatile memory arrays containing 676 organic floating-gate transistors arranged in a 26×26 grid on a plastic film with a thickness of 125 μm that can withstand more than 1000 program/erase cycles [20]. Guo et al. reported OFET multibit storage devices based on pentacene or copper phthalocyaine (CuPc), which were fabricated using polystyrene (PS) or polymethylmethacrylate (PMMA) modified SiO 2 as dielectric layer through light-assisted programs [21]. The devices showed excellent multibit storage ability and the retention times were more than 250 h. Both of these were examples significantly progress the research of OFET memory. Although the performance of OFET memory is still not comparable with that of other types of organic memories or silicon counterparts, they show tremendous potential for future applications. In this feature article, we review the recent progress in classes of OFET-based memory including floating gate, polymer electret, ferroelectric and several other types of OFET memories with unique configurations.

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“…18,19 It has been reported that TOMDs have memory functions from ferroelectric polymers, metal nanoparticles or charge trapping layers, and polymer energy well structures. [20][21][22][23][24][25][26][27][28][29][30] However, most TOMDs reported to date have limitations with respect to high operation voltages and/or poor retention (stability) characteristics, even though basic memory functions in transistor structures can be welldemonstrated. Thus, it is very important to achieve both low voltage and high retention characteristics at the same time for further consideration toward commercialization of TOMDs, particularly for mobile applications, of which the first priority is low power consumption, as well as stability.…”

Section: Introductionmentioning

confidence: 99%

Strong molecular weight effects of gate-insulating memory polymers in low-voltage organic nonvolatile memory transistors with outstanding retention characteristics

et al. 2016

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Organic nonvolatile memory transistors, featuring low-voltage operation (⩽5 V) and high retention characteristics (410 000 cycles), are demonstrated by introducing high molecular weight poly(vinyl alcohol) (PVA) as a gate insulating layer. PVA polymers with four different molecular weights (9.5-166 kDa) are examined for organic memory devices with poly(3-hexylthiophene) channel layers. All devices show excellent p-type transistor behavior and strong hysteresis in the transfer curves, but the lower molecular weight PVA delivers the higher hole mobility and the wider memory window. This has been attributed to the higher ratio of hydroxyl group dipoles that align in the out-of-plane direction of the PVA layers, as supported by impedance spectroscopy (dielectric constants), polarized Fourier transform-infrared spectroscopy and synchrotron radiation grazing incidence X-ray diffraction measurements. However, outstanding retention characteristics (o4% current variation after 10 000 cycles) have been achieved with the higher molecular weight PVA (166 kDa) rather than the lower molecular weight PVA (9.5 kDa).

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A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers

Cited by 48 publications

References 16 publications

A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

Nonvolatile memory devices based on organic field-effect transistors

Strong molecular weight effects of gate-insulating memory polymers in low-voltage organic nonvolatile memory transistors with outstanding retention characteristics

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