particularly for inference of previouslytrained Deep Neural Networks, [1,2] as well as Neuromorphic computing. [3,4] Many factors including resistance values, memory window, resistance drift, read noise, and programming accuracy impact the performance of PCM in analog in-memory computing applications. We previously showed that introduction of an additional projection liner, [5][6][7] which is comprised of a non-phase change material, helps mitigate non-ideal attributes of PCM devices such as drift and noise. Here, we perform a systematic study of these electrical properties and discuss their implications for in-memory inference computing. We show that these properties are tunable through the change of projection liner, which enables the optimization of the device characteristics to improve the network accuracy of chips using these devices for in-memory computing.As many of the device performance metrics, for example, resistance drift, memory window, read noise, can be modulated by the liner, it is important to understand how to optimize these metrics to produce the best results for various deep neural networks (DNNs). We developed models to represent the drift and noise behavior of the PCMs, and use them to evaluate the performance of these PCM devices in neural network inference applications. We evaluate large neural networks with tens of millions of weights using the PCM with and without liner, and evaluate a variety of DNNs and test datasets at multiple time-steps after programming. We find that the liner devices perform well across different DNN types, including recurrent neural networks (RNNs), Convolutional Neural Networks (CNNs), and Transformer-based networks. For RNNs, we evaluate a two-layer Long Short-Term Memory (LSTM) network on the Penn Treebank dataset. [8] For CNNs, we examine a ResNet-32 network using the CIFAR-10 dataset. [9] And for Transformer-based networks, we evaluate BERT-base on the MRPC dataset [10] and MNLI dataset. [11] We also evaluate various weight mapping schemes, including using a direct weight mapping scheme for one or two PCM per weight and an optimized weight mapping scheme using four PCMs per weight. [12] We show that PCM with liner can improve network accuracy for all these weight mapping schemes as well as for networks with
Phase change memory (PCM) is one of the most promising candidates for non-von Neumann based analog in-memory computing-particularly for inference of previously-trained deep neural networks (DNN).It is shown that PCM electrical properties can be tuned systematically using a projection liner, which is designed for resistance drift mitigation, in the manufacturable mushroom PCM. A systematic study of the electrical properties-including resistance values, memory window, resistance drift, read noise, and their impact on the accuracy of large neural networks of various types and with tens of millions of weights is performed. It is sown that the DNN accuracy can be improved by the PCM with liner for both the short term and long term after programming, due to red...