A Flexible AMOLED Display Driven by Organic TFTs with an Inkjetted Semiconductor Layer

Miyamoto, Akihito; Okumoto, Yuko; Sasai, Kenichi; Morita, Kiyoyuki

doi:10.3169/itej.68.j437

Cited by 2 publications

(4 citation statements)

References 12 publications

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“…Early reports on OFET/OLED integration were made in the 1990s, [268] and since then, numerous research groups have developed prototype OFET-driven flexible OLED displays. [20,35,58,[269][270][271][272][273][274][275][276] The inherent benefits of OLEDs are evident, e.g., fast response time, true black state, and a slim profile that enables flexible displays. [53,54] However, it is unanimously agreed that there is still room for improvement as far as performance, uniformity, and operation stability of OFET-driven displays are considered.…”

Section: Introductionmentioning

confidence: 99%

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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According to the forecast of Allied Market Research, the flexible electronics market is projected to reach $42.48 billion by 2027. It is estimated to revolutionize the lighting technology, power integration displays, and health monitoring systems. The popularity of flexible electronics is mainly due to the unique benefits of organic materials and devices that offer cost-effectiveness, low-temperature processability, mechanical softness, and shape adaptability, [5][6][7] which are difficult to obtain with traditional, complementary-metal-oxide-semiconductor (CMOS)-based rigid systems. [8] Over the past two decades, research interest in flexible electronic systems has grown exponentially, driven by the requirements of interface softness and shape adaptability for electronics used in Internet-of-Things (IoT), [9] human-machine interfaces, [10] and advanced healthcare. [11] Although significant progress has been made in academia, the practical application of flexible electronics in the industry is limited. Presently, thin-film photovoltaics and flexible displays mainly contribute to the flexible electronics market, with a noticeable presence held by radio frequency identification (RFID) tags and medical X-ray imagers. [12] Indeed, much of the success of present flexible electronic systems rely on the performance and reliability of thin-film The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET-and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

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Section: Introductionmentioning

confidence: 99%

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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“…In Figure f, the calculated carrier mobility average 52.8 cm 2 V –1 s –1 , and the maximum mobility reaches 75 cm 2 V –1 s –1 . When compared to TFTs based on indium gallium zinc oxide (IGZO), − ,− organics, − ,− CNTs, and previous MoS 2 ,− employed in flexible displays (refer to Table ), our results demonstrate the highest mobility, which is crucial to the display performance in terms of offering faster switching and reduced response time on the image quality. Besides, these devices also exhibit high on-state currents of 0.9 mA and large on/off ratio (average 1.5 × 10 8 , Figure g).…”

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confidence: 88%

“…Note that the active matrix achieved a pixel yield of 100% without any crosstalk. The high performance and resolution of our fabricated ML-MoS 2 active-matrix driving circuits show superiority over the organic − ,− and CNT driving circuits. Also refer to Table for a comprehensive comparison of different TFT technologies.…”

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confidence: 88%

“…Conventional semiconductors such as amorphous or polycrystalline silicon and metal oxides can be used for fabrication of flexible TFTs but usually exhibit a trade-off in performance as compared to their rigid counterparts. − In contrast, organic semiconductors, semiconducting carbon nanotubes (CNTs), and emergent two-dimensional (2D) semiconductors are very promising candidates due to their intrinsic mechanical flexibility. Organic TFTs are usually reported to have good flexibility yet poor performance, as well as incompatibility with standard microfabrication techniques. − CNT and 2D-semiconductor TFTs are considered to offer competitive performance compared with conventional semiconductors for high-end applications, although many technological challenges are waiting to be overcome. − …”

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MoS₂-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays

Huang,

Wang,

et al. 2023

Nano Lett.

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semiconductors offer great potential as high-performance materials for thin film transistors (TFTs) in displays. Their thin, stable, and flexible nature, along with excellent electrical properties, makes them suitable for flexible displays. However, previous demonstrations lacked clear superiority in pixel resolution and TFT performance. Here we present the flexible 2T1C pixel driving circuit for active-matrix displays based on high-quality large-scale monolayer MoS 2 . A gate-first fabrication process was developed for flexible MoS 2 -TFTs, showing a remarkable carrier mobility (average at 52.8 cm 2 V −1 s −1 ), high on/off ratio (average at 1.5 × 10 8 ), and negligible hysteresis. The driving current can be modulated by pulsed input voltages and demonstrates a stable and prompt response to both frequency and amplitude. We also demonstrated a 10 × 10 active-matrix with high resolution of 508 pixels per inch, exhibiting 100% yield and high uniformity. The driving circuit works well under bending up to ∼0.91% strain, highlighting its normal functions in flexible displays.

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A Flexible AMOLED Display Driven by Organic TFTs with an Inkjetted Semiconductor Layer

Abstract: Fig.1 Schematic cross section view of a sub-pixel in a flexible OLED display driven by OTFTs.

Cited by 2 publications

References 12 publications

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

MoS₂-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays

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A Flexible AMOLED Display Driven by Organic TFTs with an Inkjetted Semiconductor Layer

Abstract: Fig.1 Schematic cross section view of a sub-pixel in a flexible OLED display driven by OTFTs.

Cited by 2 publications

References 12 publications

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

MoS2-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays

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MoS₂-Thin Film Transistor Based Flexible 2T1C Driving Circuits for Active-Matrix Displays