A Fitting Model for Asymmetric &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$I$ &lt;/tex-math&gt; &lt;/inline-formula&gt;–&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$V$ &lt;/tex-math&gt; &lt;/inline-formula&gt; Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

Satou, Akira; Tamamushi, Gen; Sugawara, Kazuo; Mitsushio, Junki; Ryzhii, V.; Otsuji, T.

doi:10.1109/ted.2016.2578325

Cited by 13 publications

(6 citation statements)

References 20 publications

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“…In the calculations, we take into account the quantum capacitance correction [48], fringing, and plasma leakage as predicted by the phenomenological model described later in the work and in Supplemental Material [51]. One can see that the theoretical calculations made without any fitting parameters reproduce relatively well the absolute values and the functional gate-voltage dependencies of the plasma frequency for all four cavities, close to ¼ power dependence.…”

Section: A Resonant Plasmons At Zero Drain Current Conditionsmentioning

confidence: 86%

“…Knowing the total parasitic resistance R 0 , we can extract sample averaged conductivity σ ¼ ðL ch =WÞ= ðR − R 0 Þ, where L ch is the total channel length, W is the average channel width, and R is the total resistance. The carrier mobility μ i can be calculated from the equation [29,48] for details). The electron and hole density n i and p i (index i ¼ 1, 2 numerates regions with high and low conductivity, respectively) as a function of the back-gate voltage can be calculated using the parallel-plate capacitor model with the correction by the quantum capacitance of graphene.…”

Section: A Samplesmentioning

confidence: 99%

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Room-Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

et al. 2020

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We study terahertz (THz) radiation transmission through grating-gate graphene-based nanostructures. We report on room-temperature THz radiation amplification stimulated by current-driven plasmon excitation. Specifically, with an increase of the dc current under periodic charge density modulation, we observe a strong redshift of the resonant THz plasmon absorption, followed by a window of complete transparency to incoming radiation and subsequent amplification and blueshift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. Additionally, we present a simple model offering a phenomenological description of the observed THz amplification. This model shows that in the presence of a dc current the radiation-induced correction to dissipation is sensitive to the phase shift between oscillations of carrier density and drift velocity. And, with an increasing current, the dissipation becomes negative, leading to amplification. The experimental results of this work, as all obtained at roomtemperature, pave the way toward the new 2D plasmon-based, voltage-tunable THz radiation amplifiers.

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Section: A Resonant Plasmons At Zero Drain Current Conditionsmentioning

confidence: 86%

Section: A Samplesmentioning

confidence: 99%

Room-Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

et al. 2020

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“…The current changes very slowly when the gate voltage is positively biased. The asymmetric I-V characteristics of the two GFETs could be a result of the thermoionic emission and interband tunneling at the junctions between the gated and access regions [21]. The resistance of the graphene on the 100 W sputtered MnZn ferrite thin film is much smaller than that on the 150 W sputtered thin film at the same gate bias, as compared in Fig.…”

Section: Resultsmentioning

confidence: 99%

Infrared Properties and Terahertz Wave Modulation of Graphene/MnZn Ferrite/p-Si Heterojunctions

et al. 2017

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MnZn ferrite thin films were deposited on p-Si substrate and used as the dielectric layer in the graphene field effect transistor for infrared and terahertz device applications. The conditions for MnZn ferrite thin film deposition were optimized before device fabrication. The infrared properties and terahertz wave modulation were studied at different gate voltage. The resistive and magnetic MnZn ferrite thin films are highly transparent for THz wave, which make it possible to magnetically modulate the transmitted THz wave via the large magnetoresistance of graphene monolayer.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-2250-2) contains supplementary material, which is available to authorized users.

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“…Knowing the total parasitic resistance R 0 we can extract sample averaged conductivity σ = (L ch /W )/(R − R 0 ), where L ch is the total channel length, W is the average channel width, R is the total resistance. The carrier mobility µ i can be calculated from equation eµ i (n i +p i ) = σ i (see [26,44] for details). The electron and hole density n i and p i (index i = 1, 2 numerates regions with high and low conductivity, respectively) as a function of the back gate voltage can be calculated using the parallelplate capacitor model with the correction by the quantum capacitance of graphene.…”

Section: A Samplesmentioning

confidence: 99%

“…In the calculations we have taken into account the quantum capacitance correction [44], fringing and plasma leakage as predicted by phenomenological model described later in the work and in the supplementary materials. One can see that the theoretical calculations made without any fitting parameters reproduce relatively well the absolute values and the functional gate voltage dependencies of the plasma frequency for all four cavities, close to 1 /4 power dependence.…”

Section: A Resonant Plasmons At Zero Drain Current Conditionsmentioning

confidence: 99%

Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

Boubanga-Tombet,

Knap,

Yadav

et al. 2020

Preprint

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We report on experimental studies of terahertz (THz) radiation transmission through gratinggate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the dc current under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.

show abstract

A Fitting Model for Asymmetric <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math> </inline-formula> Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

Cited by 13 publications

References 20 publications

Room-Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

Room-Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

Infrared Properties and Terahertz Wave Modulation of Graphene/MnZn Ferrite/p-Si Heterojunctions

Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

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