2019
DOI: 10.1039/c9ra08515g
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A first-principles study of strain tuned optical properties in monolayer tellurium

Abstract: We have theoretically investigated the tunable optical properties of monolayer tellurium under biaxial strain and materials with better performance can be obtained with the application of strain.

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Cited by 6 publications
(3 citation statements)
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“…By studying ambipolar tellurene based FETs, Berweger demonstrated the general ability of near-field scanning microwave microscopy to image and study the local carrier type and relevant conductivity by operando [99] . It was revealed that the global minimum of device conductivity relying on transport measurements results from the continued coexistence of p-type regions at the device edge and n-type regions in the interior of their micrometer-scale devices.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…By studying ambipolar tellurene based FETs, Berweger demonstrated the general ability of near-field scanning microwave microscopy to image and study the local carrier type and relevant conductivity by operando [99] . It was revealed that the global minimum of device conductivity relying on transport measurements results from the continued coexistence of p-type regions at the device edge and n-type regions in the interior of their micrometer-scale devices.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…ε z , exhibits different properties from that along the x and y directions. Compared with monolayer Te, the static dielectric constant ε 1 (0) of the armchair (5, 5) NT along three directions is larger than that of monolayer Te [39], and the ε 1 (0) of armchair (5, 5) NT along the z direction is greater than that along the x and y directions. The imaginary part of the dielectric constant, ε 2 , reflects the absorption properties of the material, where the peaks of ε 2x and ε 2y are found at 1.6 eV, and the peak of ε 2z is near 0.9 eV.…”
Section: Resultsmentioning
confidence: 85%
“…Similar to BP, the bandgap and optical property of Te can also be tuned through changes in the layer thickness [107,140,141], the mechanical strain [43,108,[142][143][144], the charge doping [145], and the external electrical field [146]. Te shows a thickness-dependent bandgap evolution with an indirect bandgap of 0.35 eV in the bulk and a direct bandgap of 1.04 eV in its monolayer form [107].…”
Section: Tellurenementioning
confidence: 99%