A finite-element program for modeling transient phenomena in GaAs MESFET's

Riemenschneider, P.R.H.; Wang, K.L.

doi:10.1109/t-ed.1983.21270

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1985

1991

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Cited by 4 publications

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“…Riemenschneider and Wang have developed a twodimensional, finite-element program for analyzing transient and steady-state characteristics of GaAs MESFETs [17]. The devices that they have analyzed are dominated by electrons, and the contribution of holes to the total current flow is negligible.…”

Section: Formulation Of Riemenschneider and Wangmentioning

confidence: 99%

Modeling GaAs/AlGaAs devices: A critical review

Bennet

1985

IEEE Circuits Devices Mag.

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Section: Formulation Of Riemenschneider and Wangmentioning

confidence: 99%

Modeling GaAs/AlGaAs devices: A critical review

Bennet

1985

IEEE Circuits Devices Mag.

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GaAs CCD CHARGE TRANSFER SIMULATION

Poore

Kosel

1991

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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A computer program for the solution of the single carrier semiconductor equations in GaAs has been developed to simulate charge storage and transfer in GaAs charge‐coupled devices. An uncoupled Newton method is used to solve the steady state problem, and a stable, uncoupled method is used for the transient solution. Using transient simulation, the transfer of a charge packet from well to well can be simulated over time. By comparing the size of the charge packet before and after the transfer, information on the charge transfer inefficency can be derived.

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Accurate Simulation of MESFET by Finite Element Method Including Energy Transport and Substrate Effects

Song¹,

Itoh

1985

15th European Microwave Conference, 1985

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A finite-element program for modeling transient phenomena in GaAs MESFET's

Cited by 4 publications

References 22 publications

Modeling GaAs/AlGaAs devices: A critical review

Modeling GaAs/AlGaAs devices: A critical review

GaAs CCD CHARGE TRANSFER SIMULATION

Accurate Simulation of MESFET by Finite Element Method Including Energy Transport and Substrate Effects

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