A fine pitch probe technology for VLSI wafer testing

Tada, Tetsuo; Takagi, R.; Nakao, S.; Hyozo, M.; Arakawa, T.; Sawada, Ken; Ueda, M.

doi:10.1109/test.1990.114110

Cited by 8 publications

(3 citation statements)

References 2 publications

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“…The traditional probe card is difficult to adapt for the higher pad-density IC test. In order to solve these problems, several attempts to fabricate a probe card using semiconductor fabrication techniques [3], [4] have been conducted.…”

Section: Porous Silicon Micromachining Technologymentioning

confidence: 99%

Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

Kim¹,

Yoon²,

Lee³

2005

ETRI J

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We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of 5 µm, a width of 50 µm, and a length of 800 µm. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was 170 µm, and an annealing process was performed for 20 min at 500°C. The contact resistance of the newly fabricated probe card was less than 2 Ω, and its lifetime was more than 20,000 turns.

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Section: Porous Silicon Micromachining Technologymentioning

confidence: 99%

Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

Kim¹,

Yoon²,

Lee³

2005

ETRI J

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“…Probe cards are widely classified into cantilever needle type (Tada et al 1990), vertical needle type (Sasho and Sakata 1996;Boehm 2006) and microelectro-mechanical system (MEMS) type (Petersen et al 2004;Kim et al 2005;Wang et al 2008;Kim and Kim 2008), depending on shape and manufacturing method of probes. Needle type probe card is the most common type, and its design and fabrication are easier than MEMS probe card.…”

Section: Introductionmentioning

confidence: 99%

A MEMS guide plate for a high temperature testing of a wafer level packaged die wafer

Choi¹,

Ryu

2010

Microsyst Technol

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This paper describes the design and fabrication of a MEMS guide plate, which was used for a vertical probe card to test a wafer level packaged die wafer. The size of the fabricated MEMS guide plate was 10.6 9 10.6 cm. The MEMS guide plate consisted of 8,192 holes to insert pogo pins, and four holes for bolting between the guide plate and the housing. To insert pogo pins easily, an inclined plane was defined at the back of each hole. Pitch and diameter of the hole were 650 and 260 lm, respectively. In order to define inserting holes and inclined planes at an exact position, silicon MEMS technology was used such as anisotropic etching, deep reactive etching and more. Silicon was used as the material of the guide plate to reduce alignment mismatch between the pogo pins and solder bumps during a high temperature testing. A combined probe card with the fabricated MEMS guide plate showed good x-y alignment and planarity errors within ±9 and ±10 lm at room temperature, respectively. In addition, x-y alignment and planarity are ±20 and ±16 lm at 125°C, respectively. The proposed MEMS guide plate can be applied to a vertical probe card for burn-in testing of a wafer level packaged die wafer because the thermal expansion coefficient of the MEMS guide plate and die wafer is same.

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“…3) However, although high-density and high-pincount probing are required in wafer level testing, traditional probe cards with needles/wire have limitations due to the difficulty of manufacturing probe cards and the parasitic capacitance and inductance that is induced between needles in high-operating-speed tests. 4,5) This report presents multiarray silicon micro probe beams for a new wafer probe card using MEMS technology. We have fabricated micro probe beams using porous silicon micromachining, RIE (reactive ion etching), and an electroplating.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Micro Probe Beam Using MEMS Technology for New Vertical Silicon Probe Card

Mm¹,

Yoon²,

Seo

et al. 2005

Jpn. J. Appl. Phys.

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A silicon micro probe beam using a curled cantilever was designed and fabricated using microelectromechanical systems (MEMS) technology, such as porous silicon micromachining, reactive ion etching (RIE) and Au electroplating. The stress analysis of a micromachined micro probe beam was performed using finite-element ANSYS software. As a result, the basic structure was a multilayer composed of Au/Ni–Cr/Si3N4/n-epi layers. The width and length of the micro probe beam were 40 µm and 600 µm, respectively. Annealing is performed for 20 min at 500°C. The result shows that a deflection over 130 µm can be achieved for a silicon epitaxial layer 5 µm thick. The contact resistance of the micro probe beam was less than 2 Ω.

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A fine pitch probe technology for VLSI wafer testing

Cited by 8 publications

References 2 publications

Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

A MEMS guide plate for a high temperature testing of a wafer level packaged die wafer

Fabrication of Micro Probe Beam Using MEMS Technology for New Vertical Silicon Probe Card

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