A Fill Factor Loss Analysis Method for Silicon Wafer Solar Cells

Khanna, Anuradha; Mueller, Thomas; Stangl, Rolf; Hoex, Bram; Basu, Prabir K.; Aberle, Armin G.

doi:10.1109/jphotov.2013.2270348

Cited by 124 publications

(69 citation statements)

References 19 publications

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“…Following an approach similar to [34], by considering the difference between F F s and measured FF (from illuminated I-V measurements), we can estimate the magnitude of FF losses due to recombination currents following ideality factors n different from 1: ΔFF_J(n = 1) = F F s -FF (see Fig. 5).…”

Section: B Fill-factor Losses: Interdigitated Back-contacted Siliconmentioning

confidence: 99%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Tomasi

Paviet‐Salomon

Lachenal³

et al. 2014

IEEE J. Photovoltaics

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Abstract-We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hot melt inkjet printing. With this process, we obtain high shortcircuit current densities close to 40 mA/cm 2 and open-circuit voltages exceeding 720 mV, leading to a conversion efficiency of 21.5%. However, moderate fill factor values limit our current device efficiencies. Unhindered carrier transport through both heterocontact layer stacks, as well as higher passivation quality over the minority carrier-injection range relevant for solar cell operation, are identified as key factors for improved fill factor values and device performance.

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Section: B Fill-factor Losses: Interdigitated Back-contacted Siliconmentioning

confidence: 99%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Tomasi

Paviet‐Salomon

Lachenal³

et al. 2014

IEEE J. Photovoltaics

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“…Finally, as both constants a and b can be exclusively expressed in relation to the third one, f, Equation (7) can be expressed in terms of the characteristic points of the I-V curve: (13) Consequently, an expression for the solar cell/panel behavior in the first bracket, which is only dependent on I-V curve characteristic points is obtained.…”

Section: Equations Proposedmentioning

confidence: 99%

“…The equivalent circuit parameter extraction process is not an immediate task, and even doing it by analytical methods it requires a quite large number of calculations [1,2]. Some efforts have been made in order to ease the parameter extraction procedure, the use of a reduced number of points of the I-V curve being an interesting methodology [9][10][11], together with the use of expressions based on the fill factor [12][13][14], In the present paper, a new simple mathematical method to approach the behavior of a photovoltaic device is proposed as an alternative to the equivalent circuit models. In some applications a very quick and easy approach to a solar cell/panel behavior is required.…”

Section: Introductionmentioning

confidence: 99%

Simple mathematical approach to solar cell/panel behavior based on datasheet information

Pindado

Cubas

2017

Renewable Energy

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A new explicit mathematical expression is used to describe the behavior of a photovoltaic device (solar cell/panel), that is, its l-V curve, based on the characteristic points normally included in the manufacturers' datasheets. This expression consists of two simple equations, one for voltage levéis lower than the voltage at the máximum power point, V < V mp , and the other one for voltage levéis above this point, V > V mp . The first equation is defined with two of the three characteristic points (short circuit and máximum power points), whereas the second one is defined with the current and voltage levéis at máximum power point, the open circuit voltage, and a constant that can be adjusted based on: 1) the best fitting to the data within the bracket [V m , or 2) one point within this bracket, or 3) the slope of the l-V curve at the open circuit point, or 4) an estimation of that slope. Results of the solar cell/panel behavior analysis obtained with the proposed methodology, are similar to the ones obtained with the well-known l-diode/2-resistor equivalent circuit model, in terms of accuracy.

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“…5c. FFJ 01 was evaluated from the V oc at 1-sun using the exact analytical solution of reference [24]. circuit voltage at one sun using the (exact) analytical method described in Ref.…”

Section: Influence Of Surface Passivation On Pn-junction Recombinationmentioning

confidence: 99%

“…circuit voltage at one sun using the (exact) analytical method described in Ref. [24]. Lines are guides for the eye.…”

Section: Influence Of Surface Passivation On Pn-junction Recombinationmentioning

confidence: 99%

Quantification of pn-Junction Recombination in Interdigitated Back-Contact Crystalline Silicon Solar Cells

Spinelli

Loo

Vlooswijk

et al. 2017

IEEE J. Photovoltaics

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A Fill Factor Loss Analysis Method for Silicon Wafer Solar Cells

Cited by 124 publications

References 19 publications

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Simple mathematical approach to solar cell/panel behavior based on datasheet information

Quantification of pn-Junction Recombination in Interdigitated Back-Contact Crystalline Silicon Solar Cells

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