A FET transceiver suitable for FMCW radars

Yhland, K.; Fager, Christian

doi:10.1109/75.867856

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…That first presented FMCW radar transceiver front-end, which consists two diodes and a few passive components on a printed circuit board, operates as a frequency multiplier for transmitting, and simultaneously as a sub-harmonically pumped "I/Q" mixer for receiving. Then, by choosing a field effect transistor (FET) as the only nonlinear device, a transceiver circuit was designed and demonstrated simultaneously as an amplifier and a resistive mixer at around 10 GHz [10]. Using it as the prototype, a balanced FMCW transceiver is presented with improved AM noise performance [11].…”

Section: Transceiver Circuit Designmentioning

confidence: 99%

A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications

Yan

Vassilev

Gunnarsson

et al. 2018

Millimetre Wave and Terahertz Sensors and Technology XI

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A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of-9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6×10 12 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects.

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Section: Transceiver Circuit Designmentioning

confidence: 99%

A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications

Yan

Vassilev

Gunnarsson

et al. 2018

Millimetre Wave and Terahertz Sensors and Technology XI

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“…Recently the ITS (Intelligent Transportation System) group proposed the deployment of Xband FMCW sensor for detection of vehicle volume, occupancy, speed, and classifications of multi-lane highway transportation system. Although most of FMCW-based sensors known to date had been made by the hybrid microwave/millimeter-wave integrated circuits [5], literature survey indicated that a handful of FMCW chips were reported, namely, 94 GHz radar [1,3,4], 77 GHz sensor [6,7], 10 GHz radar [8], 4.8 GHz Doppler sensor [2], all made by GaAs MMIC (monolithic microwave/millimeter-wave integrated circuit) technology. To authors' best knowledge, we present the first CMOS multifunction chip for use in RF front-end of the FMCW-based sensor or radar.…”

Section: Introductionmentioning

confidence: 99%

An X-Band CMOS Multifunction-Chip FMCW Radar

Tzuang

Chang

et al. 2006

2006 IEEE MTT-S International Microwave Symposium Digest

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A fully integrated, miniaturized, low-power frequency-modulated continuous wave (FMCW) multifunction chip realized by typical 1P6M 0.18 gm deep n-well CMOS technology is presented for the first time. The multifunction chip consists of VCO, buffer amplifier, 3-dB power divider, isolators, driving amplifiers, mixer, low-noise amplifier, attenuator, etc., necessary for carrying out the X-band RF signal processing of the FMCW signals interfaced to dual antenna arrays. The chip real estate measures 2.4 mm by 1.3 mm. The entire FMCW chip design is based on the synthetic complementary-conductingstrips (CCS) quasi-TEM transmission line. The transmitter output is 3.5 dBm for frequencies between 9.5-11.0 GHz and maximum tuning bandwidth is nearly 150 MHz. The receiver channel has conversion gain of 6 dB. The calculated range is in good agreement with the measurement data.

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“…Entre las aplicaciones emergentes antes comentadas destacar fundamentalmente el interés que despiertan en la actualidad servicios de comunicación via radio, [25], como el local multipoint distribution system o LMDS para aplicaciones de banda ancha en banda Ka [26, 27, 28, 29, 30, 31j por citar algunos ejemplos, el bluetooth para aplicaciones de muy corto alcance [32], aplicaciones radar civiles como los radares embarcados anticolisión o ACC (automatic cruise control) [33,34], la combinación espacial de potencia para transmisores de alta potencia [35], o las comunicaciones por satélite [36,37]. La aparición de las mencionadas aplicaciones emergentes favorece además la investigación de nuevos métodos de diseño [14], configuraciones de amplificadores [38] o materiales y tecnologías de fabricación [39].…”

Section: Aplicacionesunclassified

Caracterización eléctrica y térmica de amplificadores MMIC de potencia

Penalva¹

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El trabajo de tesis doctoral que se presenta aborda diferentes aspectos relativos a la caracterización eléctrica y térmica de amplificadores MMIC de potencia. Los resultados obtenidos a partir del estudio teórico y experimental llevado a cabo han contribuido a un mejor III entendimiento del comportamiento de los amplificadores MMIC de potencia empleados, así como a un mejor diseño de los prototipos de transmisor desarrollados.

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A FET transceiver suitable for FMCW radars

Cited by 7 publications

References 6 publications

A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications

A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications

An X-Band CMOS Multifunction-Chip FMCW Radar

Caracterización eléctrica y térmica de amplificadores MMIC de potencia

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