A Ferrite Synaptic Transistor with Topotactic Transformation

Chen, Ge; Liu, Changxiang; Zhou, Qingli; Zhang, Qinghua; Du, Jianyu; Li, Jian‐Kun; Wang, Can; Gu, Lin; Yang, Ge; Jin, Kuijuan

doi:10.1002/adma.201900379

Cited by 142 publications

(115 citation statements)

References 51 publications

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“…[18] In addition, due to the simplicity of this structure and ease fabrication, some prototype devices for emerging applications, such as neuromorphic computing, are often investigated based on this structure. [49,[58][59][60][61] Another type of planar structure of IGTs is similar to the structure of lateral TFTs, as shown in Figure 3b. [50] According to the relative positions of the source, drain, and gate electrodes, the lateral TFT structure of IGTs can also be subdivided into four structures, namely, top-gate top contact, top-gate bottom contact, bottom-gate top contact, and bottom-gate bottom contact.…”

Section: Device Structuresmentioning

confidence: 99%

Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration

Han

Shang

et al. 2020

Advanced Intelligent Systems

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With the rapid development of the Internet of Things, the amount of data we involved in our daily life is growing exponentially, which poses significant challenges for data processing and transmission to the conventional terminal sensors that passively acquire external data. Inspired by biological sensory nervous systems, building artificial intelligent sensory systems with both sensing and computing capability is regarded as a promising way to address these challenges, by which the acquired data can be preprocessed locally and timely before transmitting them to the remote server for further processing. Ion-gated transistors (IGTs), which have been widely used in sensors and have been recently investigated for neuromorphic computing, exhibit great potential in this domain. Herein, the essential operation principles, device structures, and electrical characteristics of IGT are introduced, and the recent developments in biosensors, neuromorphic computing, and intelligent sensors with near-sensor computing and in-sensor computing modes are summarized. To conclude, the current challenges and future development of IGT for intelligent sensory systems are presented.

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Section: Device Structuresmentioning

confidence: 99%

Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration

Han

Shang

et al. 2020

Advanced Intelligent Systems

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“…The broader pre‐edge feature at ≈527.5 eV for the n = 1 SL is also seen in cubic SrFeO 3 , consistent with Fe 4+ in the former. [ 46,47 ] The n = 5 SL exhibits two pre‐peaks at 527.3 eV (A) and 529 eV (B) characteristic of oxygen 2p hybridization with Ni 3d and Fe 3d, respectively. The shape and position of feature B are similar to those seen in LaFeO 3 , lending additional support to the Fe valence being 3+ in the n = 5 SL.…”

Section: Figurementioning

confidence: 99%

Hole‐Trapping‐Induced Stabilization of Ni^4 + in SrNiO₃/LaFeO₃ Superlattices

et al. 2020

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Creating new functionality in materials containing transition metals is predicated on the ability to control the associated charge states. For a given transition metal, there is an upper limit on valence that is not exceeded under normal conditions. Here, it is demonstrated that this limit of 3+ for Ni and Fe can be exceeded via synthesis of (SrNiO3)m/(LaFeO3)n superlattices by tuning n and m. The Goldschmidt tolerance constraints are lifted, and SrNi4+O3 with holes on adjacent O anions is stabilized as a perovskite at the single‐unit‐cell level (m = 1). Holding m = 1, spectroscopy reveals that the n = 1 superlattice contains Ni3+ and Fe4+, whereas Ni4+ and Fe3+ are observed in the n = 5 superlattice. It is revealed that the B‐site cation valences can be tuned by controlling the magnitude of the FeO6 octahedral rotations, which, in turn, determine the energy balance between Ni3+/Fe4+ and Ni4+/Fe3+, thus controlling emergent electrical properties such as the band alignment and resulting hole confinement. This approach can be extended to other systems for synthesizing novel, metastable layered structures with new functionalities.

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“…[8] Therefore, the topotactic phase transformation between PV-SFO and BM-SFO enables a dramatic tuning of transport (both electronic and ionic), magnetic, and optical properties. [16][17][18] Moreover, even at ambient temperature and in the absence of liquid electrolytes, a mild electrical stimulus (several volts) is able to trigger the local topotactic phase transformation in SFO (and its analog, SrCoO x ) thin films. [14] This allows the reversible topotactic phase transformation between these two phases to be easily accessed.…”

mentioning

confidence: 99%

Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory

Tian

Fan

et al. 2019

Advanced Materials

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Oxygen stoichiometry plays a crucial role in determining the crystalline structure and physical properties of transition metal oxides (TMOs). Tuning the oxygen content via an electrochemical redox reaction can effectively manipulate the functionalities of TMOs, which is harnessed in many cutting-edge energy and information technologies such as fuel cells, [1] rechargeable batteries, [2] supercapacitors, [3] and memory devices. [4] The redox reaction in certain TMOs can be enabled by a so-called topotactic phase transformation, manifesting itself as the insertion/release of a large amount of oxygen ions without breaking the lattice framework. For example, for an ABO 3 perovskite (PV) phase, upon forming ordered oxygen vacancy channels in its lattice, it transforms into an ABO 2.5 brownmillerite (BM) phase. Along with the structural change, many intriguing physical phenomena emerge owing to the couplings between lattice, charge, and Resistive switching (RS) memory has stayed at the forefront of next-generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating brownmillerite (BM) phase and conducting perovskite (PV) phase, has emerged as promising candidate materials for RS memories. Nevertheless, the microscopic mechanism of RS in these TMOs is still unclear. Furthermore, RS devices with simultaneously high density and superior memory performance are yet to be reported. Here, using SrFeO x as a model system, it is directly observed that PV SrFeO 3 nanofilaments are formed and extend almost through the BM SrFeO 2.5 matrix in the ON state and are ruptured in the OFF state, unambiguously revealing a filamentary RS mechanism. The nanofilaments are ≈10 nm in diameter, enabling to downscale Au/ SrFeO x /SrRuO 3 RS devices to the 100 nm range for the first time. These nanodevices exhibit good performance including ON/OFF ratio as high as ≈10 4 , retention time over 10 5 s, and endurance up to 10 7 cycles. This study significantly advances the understanding of the RS mechanism in TMOs exhibiting topotactic phase transformation, and it also demonstrates the potential of these materials for use in high-density RS memories.

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A Ferrite Synaptic Transistor with Topotactic Transformation

Cited by 142 publications

References 51 publications

Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration

Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration

Hole‐Trapping‐Induced Stabilization of Ni^4 + in SrNiO₃/LaFeO₃ Superlattices

Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory

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A Ferrite Synaptic Transistor with Topotactic Transformation

Cited by 142 publications

References 51 publications

Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration

Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration

Hole‐Trapping‐Induced Stabilization of Ni4 + in SrNiO3/LaFeO3 Superlattices

Nanoscale Topotactic Phase Transformation in SrFeOx Epitaxial Thin Films for High‐Density Resistive Switching Memory

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Product

Resources

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Hole‐Trapping‐Induced Stabilization of Ni^4 + in SrNiO₃/LaFeO₃ Superlattices

Nanoscale Topotactic Phase Transformation in SrFeO_x Epitaxial Thin Films for High‐Density Resistive Switching Memory