A feature scale Greenwood–Williamson model predicting pattern-size effects in CMP

Vasilev, Boris; Bott, Sascha; Rzehak, Roland; Kücher, Peter; Bartha, Johann W.

doi:10.1016/j.mee.2011.09.007

Cited by 15 publications

(15 citation statements)

References 13 publications

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“…3 Therefore, CMP attracts numerous experimental, theoretical and numerical investigations on revealing the removal mechanism of different materials, improving the non-uniformity of wafer surface, and optimizing design layouts. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] These investigations demonstrate that understanding the removal mechanism, design pattern effects and thickness variation control is quite helpful for CMP process simulation and optimization of design for manufacturability (DFM).…”

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confidence: 85%

“…[1][2][3] In order to obtain a planar surface, various kinds of CMP models have been proposed in literature to address the removal mechanism [6][7][8][10][11][12]15 of different materials and achieve accurate surface topography simulation. 1,2,9,13,14,[16][17][18][19][22][23][24] The surface kinetic CMP models connect the total polish rates with kinetic processes and describe the wafer-scale variations of surface profiles. 1,2,6,11,[25][26][27] For the sake of elucidating the mechanical aspects of polishing systems, contact mechanics or fluid dynamics based CMP models have been developed to understand the fundamental phenomena at different length scales.…”

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confidence: 99%

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An Oxide Chemical Mechanical Planarization Model for HKMG Structures

Chen

Yang

et al. 2018

ECS J. Solid State Sci. Technol.

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In order to predict the surface topography, a chip-scale oxide chemical mechanical planarization (CMP) model is proposed in poly opening polishing processing of high-k metal gate (HKMG) structures. A geometrical chemical vapor deposition model is first constructed to describe the influence of design pattern effects on the initial surface profiles of dielectric oxides. Based on contact mechanics, the global pressure distribution is then computed to incorporate the long-range features of design structures and polishing pad deformation. The global pressure is further combined with local pattern effects to construct a feature-scale material removal rate model, which can be utilized for surface topography simulation of design chips. The predicted results of the proposed CMP model are consistent with the experimental data collected from the test patterns of HKMG CMP process. Consequently, the oxide CMP model has good potentials of predicting the surface planarity of polishing wafers and optimizing some design rules for HKMG design layouts.

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confidence: 85%

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confidence: 99%

An Oxide Chemical Mechanical Planarization Model for HKMG Structures

Chen

Yang

et al. 2018

ECS J. Solid State Sci. Technol.

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“…At 80 degrees, it was found that the surface became blunt due to the excessive elevation and the formation of large asperities via the fusion of multiple asperities, as described above. Generally, the contact state of the asperities is closely related to the removal rate in the CMP process [20,21]. is believed to be affected by changes in the asperities' contact states due to the asperity angles, as described in this section, and the experiment was performed to examine this effect.…”

Section: Scanning Electron Microscope (Sem) and Micro-ctmentioning

confidence: 99%

Analysis of Correlation between Pad Temperature and Asperity Angle in Chemical Mechanical Planarization

Jeong

Choi

et al. 2021

Applied Sciences

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Chemical mechanical planarization (CMP) is a technology widely employed in device integration and planarization processes used in semiconductor fabrication. In CMP, the polishing pad plays a key role both mechanically and chemically. The surface of the pad, consisting of asperities and pores, undergoes repeated cycles of glazing induced by polishing followed by the recovery of roughness by a conditioning process applied during CMP. As a polymer material, the pad also experiences thermal expansion from changes in temperature. Such changes can be expressed in terms of surface roughness values, but these do not fully capture the actual changes to the pad surface. In this study, the change in pad temperature occurring during CMP was analyzed with regard to its effect on the asperity angle, and the influence on CMP outcome was assessed. The changes in the surface asperities according to the steady-state pad temperature were evaluated using various measurement methods. The change in pad roughness was characterized in terms of the asperity angle, and the contact state predicted according to temperature were validated by measuring the contact perimeter, the number of contact points, and related values. Through Scanning Electron Microscope (SEM) and micro-CT analysis, it was confirmed that in the continuous polishing process and the conditioning process, the changes in asperity angle due to changes in pad temperature affect the polishing outcome.

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“…Because the on-chip pattern has a strong periodicity, this fit is not very complicated with respect to the rough- ness of the polishing pad. So the contact problem becomes a problem between a non-periodic rough surface and periodic point contact [22]. This point contact is specifically divided into two types, one is the top contact (Up), which is for fitting the peak of the parabola; the other is the bottom contact (Down), which is for the valley of the fitting parabola.…”

Section: Model Based On Surface Topography and On-chip Graphics Densitymentioning

confidence: 99%

Review on modeling and application of chemical mechanical polishing

Zhao

Wei

Wang

et al. 2020

Nanotechnology Reviews

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AbstractWith the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

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A feature scale Greenwood–Williamson model predicting pattern-size effects in CMP

Cited by 15 publications

References 13 publications

An Oxide Chemical Mechanical Planarization Model for HKMG Structures

An Oxide Chemical Mechanical Planarization Model for HKMG Structures

Analysis of Correlation between Pad Temperature and Asperity Angle in Chemical Mechanical Planarization

Review on modeling and application of chemical mechanical polishing

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