A Fault Detection Method of IGBT Bond Wire Fatigue Based on the Reduction of Measured Heatsink Thermal Resistance

Luo, Dongmei; Chen, Minyou; Lai, Wu‐Wei; Xia, Hongjian; Deng, Zhenyu; Wang, Zhi; Yu, Kai

doi:10.3390/electronics11071021

Cited by 8 publications

(2 citation statements)

References 32 publications

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“…IGBT health status monitoring technology is key to improving system reliability, and the performance of IGBT power modules will be affected after early failure and will show certain failure characteristics. The current research on the failure mechanism and state monitoring of high-power welded IGBT modules is not comprehensive, and much work needs to be carried out on both the aging mechanism and state monitoring [87,88]. IGBT module fault diagnosis is a comprehensive use of various operating state data, and appropriate data processing methods are used to discriminate latent faults, of which the fault types are mainly solder layer aging and bonding-line fracture.…”

Section: Igbt Module Health State Evaluation Index Systemmentioning

confidence: 99%

Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

et al. 2023

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As the performance requirements of insulated gate bipolar transistors (IGBTs) in various fields of power electronic systems are increasing, the IGBT power module package structure, aging mechanism analysis, and selection of health state characteristic parameters are of great significance to ensure the normal operation of power systems. At present, research on the aging failure of welded IGBT modules is relatively comprehensive and can be divided into chip aging failure and package aging failure according to their failure parts. However, there is some research on the relationship between aging failure and the characteristic quantity of power modules, but no definite system has been formed. Therefore, in this paper, the packaging structure of the solder-type IGBT modules and the aging mechanism caused by different aging reasons were summarized. Moreover, the health status monitoring of solder-type IGBT modules from the junction temperature, bonding line, solder layer, and package insulation aging health status monitoring and its quantitative assessment research progress was analyzed in detail. Also, the health state evaluation index system of the solder-type IGBT modules was completed on the basis of voltage, current, thermal, insulation parameters, and other characteristic quantities. Finally, based on the analysis of domestic and international research problems, the development trend and direction of the condition monitoring technology of solder-type IGBT modules is foreseen. The research on condition monitoring for welded IGBT module technology has a certain significance.

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Section: Igbt Module Health State Evaluation Index Systemmentioning

confidence: 99%

Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

et al. 2023

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“…The most common failure of a properly configured IGBT transistor is a failure in the connecting or internal junctions within the transistor itself. Such malfunctions can occur suddenly or, most often, undergo gradual degradation [9].…”

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confidence: 99%

A Novel Method for Diagnosing Power Electronics Devices Using Elastic Wave Emission

Kozak,

Gordon

2023

Energies

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This work is an introduction of acoustic emission (AE) signals used in order to detect the malfunction of selected semiconductor elements. The authors proposed the use of internally generated signals (elastic waves) of acoustic emission leading to the detection of the pre-fail state of switching IGBT transistors. The analysis of the AE signals allows the creation of a reference pattern of properly working transistors and at the same time the identification of abnormal signals, which are generated by a defective element. Unlike many papers, this article shows experimental results demonstrating a comparison of undamaged, properly working and defective IGBT transistors which can be used, for example, as a reference for diagnostic tools. Analysis of the signal in the frequency domain obtained from the faulty transistor (overheated or with damaged casing) shows the presence of additional frequencies which can indicate the imminent occurrence of critical damage.

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Warping model of high-power IGBT modules subjected to reflow soldering process

Gao

Wang

et al. 2023

International Journal of Mechanical Sciences

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A Fault Detection Method of IGBT Bond Wire Fatigue Based on the Reduction of Measured Heatsink Thermal Resistance

Cited by 8 publications

References 32 publications

Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

Research Progress in Failure Mechanism and Health State Evaluation Index System of Welded IGBT Power Modules

A Novel Method for Diagnosing Power Electronics Devices Using Elastic Wave Emission

Warping model of high-power IGBT modules subjected to reflow soldering process

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