Abstract:Computing-in-memory (CIM) has attracted great attention due to the need for breaking through the “memory wall”. Programmable linear random-access memory (PLRAM) for high-precision weight control is proposed to tear down the wall. However, the slow programming algorithm to tune cells limits its application in multi-level memory. Herein, a fast weight control strategy for PLRAM based on the self-calibrating erase operation is presented. The unique sidewall tunneling oxide utilized in PLRAM for bi-directional Fow… Show more
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