A Fast-Transient Capacitorless LDO With Dual Paths Active-Frequency Compensation Scheme

Ming, Xin; Kuang, Jian-Jun; Gong, Xin-ce; Lin, Zhiyi; Xiong, Jin; Qin, Yao; Wang, Zhuo; Zhang, Bo

doi:10.1109/tpel.2022.3165116

Cited by 29 publications

(9 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This will have a substantial impact on the stability under various load situations. Therefore, by separating the pole at the gate of power transistor, a buffer placed at the output of EA is employed to reduce the impedance and enhance stability [25,26,27,28]. where g m33 , g m34 and g m35 are the transconductance of M33, M34 and M35, respectively, and r o33 is the output resistance of M33.…”

Section: Design Of the Dynamically-biased Buffermentioning

confidence: 99%

An integrated capacitor-less LDO with transient and stability enhancement

Xie,

Cai,

et al. 2024

IEICE Electron. Express

View full text Add to dashboard Cite

A novel capacitor-less low-dropout regulator (CL-LDO) is presented that achieves transient and stability enhancements through the addition of an active capacitor and a dynamically biased buffer. To enhance the transient response, an active capacitor is proposed, resulting in a significant reduction in overshoot, undershoot, and settling time. Furthermore, the dynamically-biased buffer, comprised of a super-gm source follower, effectively enhances the loop stability. Implemented and fabricated in 0.18 μm SOI BCD technology, the CL-LDO generates a stable output voltage of 1.8 V in the input voltage range from 2.8 V to 3.8 V, with a maximum load current of 100 mA and a quiescent current of 94 µA. When the load current steps from 0 mA to 100 mA, the measured results of overshoot and undershoot are 240 mV and 110 mV, respectively. The proposed CL-LDO has superior line regulation of 0.94 mV/V and load regulation of 12.66 mV/A.

show abstract

Section: Design Of the Dynamically-biased Buffermentioning

confidence: 99%

An integrated capacitor-less LDO with transient and stability enhancement

Xie,

Cai,

et al. 2024

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…For SoC application, removal of the off-chip capacitor can reduce the area of the printed circuit board (PCB) and the number of I/O pads on the chip, which is significantly beneficial in terms of integration. Therefore, in recent years, fully integrated LDO (or OCL-LDO) regulators have been widely studied and reported [ 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 ]. The output load capacitor

mainly comes from parasitics of the power line, which is generally modeled from a few decades to 100 pF, and several orders lower than the off-chip capacitor.…”

Section: Introductionmentioning

confidence: 99%

A Fully Integrated Low-Dropout Regulator with Improved Load Regulation and Transient Responses

Chen

et al. 2022

Micromachines

View full text Add to dashboard Cite

A fully integrated low-dropout (LDO) regulator with improved load regulation and transient responses in 40 nm technology is presented in this paper. Combining adjustable threshold push-–pull stage (ATPS) and master–slave power transistors topology, the proposed LDO maintains a three-stage structure within the full load range. The proposed structure ensures the steady-state performance of LDO and achieves 0.017 mV/mA load regulation. The ATPS consumes little quiescent current at light load current condition, and the turn-on threshold of the ATPS can be adjusted by a current source. Once the value of current source is set, the turn-on threshold is also determined. A benefit of the proposed structure is that the LDO can be stable from 0 to 100 mA load current with a maximum 100 pF parasitic load capacitance and a 0.7 pF compensation capacitor. It also shows good figure of merit (FOM) without an extra transient enhanced circuit. For the maximum 100 mA load transient with 100 ns edge time, the undershoot and overshoot are less than 33 mv. The dropout voltage of the regulator is 200 mV with input voltage of 1.1 V. The total current consumption of the LDO was 24.6 μA at no load.

show abstract

“…Other LDOs designed with a two-stage amplifier structure also suffer from low gain, especially when operating at low supply voltages [ 15 , 16 , 17 , 18 ]. In [ 19 , 20 , 21 ], adaptive biasing techniques are adopted to improve the transient response of the LDO while maintaining low quiescent power consumption at light loads. However, this solution only works when switching from a heavy load to a light load.…”

Section: Introductionmentioning

confidence: 99%

An Output-Capacitorless Low-Dropout Regulator with Slew-Rate Enhancement

Chen

et al. 2022

Micromachines

View full text Add to dashboard Cite

A novel output-capacitorless low-dropout regulator (OCL-LDO) with an embedded slew-rate-enhancement (SRE) circuit is presented in this paper. The SRE circuit adopts a transient current-boost strategy to improve the slew rate at the gate of the power transistor when a large voltage spike at the output is detected. In addition, a feed-forward transconductance cell is introduced to form a push–pull output structure with the power transistor. The simulation results show that the maximum transient output voltage variation is 23.5 mV when the load current ILOAD is stepped from 0 to 100 mA in 100 ns with a load capacitance of 100 pF, and the settling time is 1.2 μs. The proposed OCL-LDO consumes a quiescent current of 30 μA and has a dropout voltage of 200 mV for the maximum output current of 100 mA.

show abstract

A Fast-Transient Capacitorless LDO With Dual Paths Active-Frequency Compensation Scheme

Cited by 29 publications

References 34 publications

An integrated capacitor-less LDO with transient and stability enhancement

An integrated capacitor-less LDO with transient and stability enhancement

A Fully Integrated Low-Dropout Regulator with Improved Load Regulation and Transient Responses

An Output-Capacitorless Low-Dropout Regulator with Slew-Rate Enhancement

Contact Info

Product

Resources

About