A Fast Process-Variation-Aware Mask Optimization Algorithm With a Novel Intensity Modeling

Ahmed, Ammar; Takahashi, Atsushi; Tanaka, Satoshi; Kodama, Chikaaki

doi:10.1109/tvlsi.2016.2616840

Cited by 10 publications

(25 citation statements)

References 34 publications

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“…However, using more kernels is required in further iterations. Intensity difference map has been recently proposed in [15] and its performance has been confirmed in [33].…”

Section: Recent Researchmentioning

confidence: 95%

“…Recently, a novel intensity-based OPC methodology has been published in [15]. This algorithm outperforms the most recent effective algorithms on the public benchmarks in terms of pattern fidelity under process variations and runtime.…”

Section: Recent Researchmentioning

confidence: 99%

“…A positive corner forms 90 angle outside the polygon, while a negative corner forms 270 angle inside the polygon. Figure 1(a) illustrates a target pattern with both types of corners [15].…”

Section: Lithographic Pattern Terminologymentioning

confidence: 99%

“…A serif on a positive corner is a squared feature added outside of the polygon, while, a serif on a negative corner is a square picked from the polygon. An SRAF (scatter bar) is a long bar parallel to an edge of a polygon in the target [15].…”

Section: Lithographic Pattern Terminologymentioning

confidence: 99%

“…In this chapter, recent state-of-the-art OPC algorithms are discussed. Thereafter, a recently published algorithm in [15,16] is deeply analyzed and its performance is verified in terms of pattern fidelity under process variations, mask manufacturability, and computation time.…”

Section: Introductionmentioning

confidence: 99%

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Optical Proximity Correction (OPC) Under Immersion Lithography

Ahmed¹,

Takahashi²,

Kodaman³

2018

Micro/Nanolithography - A Heuristic Aspect on the Enduring Technology

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As advanced technology nodes continue scaling down into sub-16 nm regime, optical microlithography becomes more vulnerable to process variations. As a result, overall lithographic yield continuously degrades. Since next-generation lithography (NGL) is still not mature enough, the industry relies heavily on resolution enhancement techniques (RETs), wherein optical proximity correction (OPC) with 193 nm immersion lithography is dominant in the foreseeable future. However, OPC algorithms are getting more aggressive. Consequently, complex mask solutions are outputted. Furthermore, this results in long computation time along with mask data volume explosion. In this chapter, recent state-of-the-art OPC algorithms are discussed. Thereafter, the performance of a recently published fast OPC methodology-to generate highly manufactured mask solutions with acceptable pattern fidelity under process variations-is verified on the public benchmarks.

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“…However, using more kernels is required in further iterations. Intensity difference map has been recently proposed in [15] and its performance has been confirmed in [33].…”

Section: Recent Researchmentioning

confidence: 95%

Section: Recent Researchmentioning

confidence: 99%

“…A positive corner forms 90 angle outside the polygon, while a negative corner forms 270 angle inside the polygon. Figure 1(a) illustrates a target pattern with both types of corners [15].…”

Section: Lithographic Pattern Terminologymentioning

confidence: 99%

Section: Lithographic Pattern Terminologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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