2014
DOI: 10.1016/j.jphotochemrev.2014.04.002
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A fantastic graphitic carbon nitride (g-C3N4) material: Electronic structure, photocatalytic and photoelectronic properties

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Cited by 861 publications
(397 citation statements)
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“…Although the activation of pristine g-C 3 N 4 can be achieved in the visible light region up to 460 nm, its photocatalytic efficiency is limited due to the high recombination probability of photoexcited electron-hole pairs [20]. It is expected that coupling g-C 3 N 4 with TiO 2 would form a Z-scheme photocatalytic system and solve the problems normally encountered when using each of the semiconducting materials individually.…”
Section: Introductionmentioning
confidence: 99%
“…Although the activation of pristine g-C 3 N 4 can be achieved in the visible light region up to 460 nm, its photocatalytic efficiency is limited due to the high recombination probability of photoexcited electron-hole pairs [20]. It is expected that coupling g-C 3 N 4 with TiO 2 would form a Z-scheme photocatalytic system and solve the problems normally encountered when using each of the semiconducting materials individually.…”
Section: Introductionmentioning
confidence: 99%
“…This unique property and its electric conductivity make it promising for potential applications and theoretical predictions [19][20][21]. Wang et al first used g-C 3 N 4 as a photocatalyst to successfully produce hydrogen [21], and since then, research has explored H 2 evolution and organics degradation [22,23]. However, pure g-C 3 N 4 has some shortcomings, such as rapid recombination of photo-generated electron-hole pairs, resulting in low photocatalytic activity [24,25].…”
Section: Introductionmentioning
confidence: 99%
“…Due to the strong C-N good chemical stability and thermal stability (up to 600 o C). All these merits make it to be an idea material for the application in hydrogen evolution 19,[21][22][23][24][25][26][27][28][29][30] as well as environmental pollutant degradation. [31][32][33][34][35][36][37][38][39][40] g-C 3 N 4 is a semiconductor with a band gap of 2.7 eV, with a VB level suitable for hydrogen and oxygen evolution both.…”
Section: Introductionmentioning
confidence: 99%