2016 IEEE Global Communications Conference (GLOBECOM) 2016
DOI: 10.1109/glocom.2016.7841495
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A Fairness-Aware and Privacy-Preserving Online Insurance Application System

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Cited by 8 publications
(2 citation statements)
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“…The dominant recombination mechanism of carriers in the device is the Shockley-Read-Hall (SRH), which the surface recombination velocities of electrons and holes are set as S n = S p = 10 7 cm s −1 . The electrical parameters of PSC related to TiO 2 [27][28][29][30][31][32][33], perovskite [27,[34][35][36], CuSCN [37] and GeSe [14,38,39] can be observed in table 1.…”
Section: Electrical Modelmentioning
confidence: 99%
“…The dominant recombination mechanism of carriers in the device is the Shockley-Read-Hall (SRH), which the surface recombination velocities of electrons and holes are set as S n = S p = 10 7 cm s −1 . The electrical parameters of PSC related to TiO 2 [27][28][29][30][31][32][33], perovskite [27,[34][35][36], CuSCN [37] and GeSe [14,38,39] can be observed in table 1.…”
Section: Electrical Modelmentioning
confidence: 99%
“…The trap-assisted recombination model is used to simulate the recombination rate within bulk materials, which is directly related to the volume of the layers. In Table 1, Ꜫr denotes the relative permittivity Nc and Nv are effective conduction band and valance band densities, µn and µp are electron and hole mobilities, χ is electron affinity, Eg is the band gap, NA and ND are acceptor and donor densities, and τp, τn are the life times of hole and electron [51][52][53][54][55][56][57][58][59][60][61][62][63][64][65].…”
Section: Simulation Detailsmentioning
confidence: 99%