A failure location technology for SiP devices based on TDR nondestructive testing method

Abstract

Purpose Traditional nondestructive failure localization techniques are increasingly difficult to meet the requirements of high density and integration of system in package (SIP) devices in terms of resolution and accuracy. Time domain reflection (TDR) is recognized as a novel positioning analysis technology gradually being used in the electronics industry because of the good compatibility, high accuracy and high efficiency. However, there are limited reports focus on the application of TDR technology to SiP devices. Design/methodology/approach In this study, the authors used the TDR technique to locate the failure of SiP devices, and the results showed that the TDR technique can accurately locate the cracking of internal solder joints of SiP devices. Findings The measured transmission rate of electromagnetic wave signal was 9.56 × 107 m/s in the experimental SiP devices. In addition, the TDR technique successfully located the failure point, which was mainly caused by the cracking of the solder joint at the edge of the SiP device after 1,500 thermal cycles. Originality/value TDR technology is creatively applied to SiP device failure location, and quantitative analysis is realized.