A facile synthesis and photoluminescence of porous S-doped ZnO architectures

Tao, Zhenwei; Yu, Xiaojiang; Liu, Jie; Yang, Sen

doi:10.1016/j.jallcom.2007.04.273

Cited by 20 publications

(13 citation statements)

References 24 publications

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“…1 The increasing of diameter size of ZnO nanorods is possibly due to Al 3+ substituted into Zn 2+ . Increase the doping percentage, more ion introduced into Zn 2+ and this possible to increase the diameter size of ZnO nanorods [20,21]. …”

Section: A Structural Propertiesmentioning

confidence: 99%

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Electrical properties of Aluminium doped Zinc Oxide nanorods with different dopant percentage

Mohamed

Ibrahim

Asib

et al. 2015

2015 IEEE Student Conference on Research and Development (SCOReD)

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This Zinc Oxide (ZnO) nanorods films was synthesized with various Aluminum (Al) doping percentage deposited on ZnO seed layer using two step process sol-gel spin coating and immersion method. The Al doping was varied at different percentage from 0.6 at.% Al to 1.2 at.% Al. The morphology and electrical properties of ZnO nanorods were characterized using Field Emission Scanning Electron Microscopy (FESEM) and current voltage (I-V) measurement system respectively. Based on FESEM images, it showed that the ZnO nanorods are in hexagonal-shaped with the increasing of diameter size ZnO nanorods as the increasing percentage of Al doped. The current voltage measurement showed the highest current voltage and lowest resistivity at 0.8 at.% of Al doping.

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Section: A Structural Propertiesmentioning

confidence: 99%

“…ZnO is one of the most promising candidates for a lot of applications in semiconductor field such as new optical displays, MEMS related devices, light emission devices and solar cells [2][3][4][5][6][7]. ZnO has small crystalline sizes which were stable when operated at high temperature for a long period.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of Aluminium doped Zinc Oxide nanorods with different dopant percentage

Mohamed

Ibrahim

Asib

et al. 2015

2015 IEEE Student Conference on Research and Development (SCOReD)

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show abstract

“…[1][2][3][4][5][6][7][8][9][10][11] The ZnO material has wide bandgap energy of 3.37 eV and large exciton binding energy of 60 meV, which make ZnO a promising candidate for many applications such as electronic, optoelectronic and information technology devices including sensors, displays, and solar cells. 12 However, in many applications both the size and the shape of the ZnO particles determine the material properties and therefore the performance of the devices.…”

Section: Introductionmentioning

confidence: 99%

“…6 12 The one-dimensional (1-D) nanostructured ZnO with different morphologies have been reported, for instances, nanorods, nanowires, nanobelts and quantum dots. [1][2][3][4][5][6][7][8][9][10][11] Several techniques have been employed to grow 1-D ZnO nanostructures, such as sol-gel technique, hydrothermal or solvothermal treatment, chemical precipitation method, molecular beam epitaxy and chemical vapor deposition. Among these techniques, the sol-gel method has distinctive advantages due to its lower crystallization temperature, ability to tune microstructure via sol-gel * Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Influence of Post-Annealing Temperature on the Material Properties of Zinc Oxide Nanorods

Kamaruddin¹,

Sahdan²,

Chan³

et al. 2010

j nanosci nanotechnol

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Zinc oxide (ZnO) is an emerging optoelectronic material in large area electronic applications due to its various functional behaviors. We present the fabrication and the characterization of ZnO nanorods. The ZnO nanorods were synthesized using sol-gel hydrothermal technique on oxidized silicon substrates. Different post-annealing temperatures were explored in the sol-gel hydrothermal synthesis of the ZnO nanorods. The surface morphology of the ZnO nanorods were examined using scanning electron microscope (SEM). In order to investigate the structural properties, the ZnO nanorods were measured using X-ray diffractometer (XRD). The optical properties were measured using ultraviolet-visible (UV-Vis) spectroscopy. The influence of the post-annealing temperature on the realized ZnO nanorods will be revealed and discussed in this paper.

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“…to bulk structure [1][2][3][4][5][6][7][8][9][10][11]. The functional nanostructures posses excellent physical properties, owing to their geometry with high aspect ratio, which modifies the light-matter interaction.…”

mentioning

confidence: 99%

Influence of immerse time on the properties of zinc oxide nanostructures

Kamaruddin

Sahdan

Chan

et al. 2010

International Conference on Photonics 2010

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Zinc oxide (ZnO) is an emerging optoelectronic material in large area electronic applications due to its various functional behaviors. We present the fabrication and characterizations of ZnO nanostructures. The ZnO nanostructures consisting of nanorods were synthesized using sol-gel hydrothermal technique on oxidized silicon (Si) substrates. In the fabrication of ZnO nanorods, the oxidized Si substrates were immersed in ZnO aqueous solution for different times ranging from 3.5 hours to 5 hours. The surface morphologies of the ZnO nanorods were examined using scanning electron microscope (SEM). In order to investigate the structural properties, the ZnO nanorods were measured using Xray diffractometer (XRD). The optical properties were measured using photoluminescence (PL) spectrophotometer. The influence of the immerse time on the properties of the realized ZnO nanostructures will be revealed and discussed in this paper.

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A facile synthesis and photoluminescence of porous S-doped ZnO architectures

Cited by 20 publications

References 24 publications

Electrical properties of Aluminium doped Zinc Oxide nanorods with different dopant percentage

Electrical properties of Aluminium doped Zinc Oxide nanorods with different dopant percentage

Influence of Post-Annealing Temperature on the Material Properties of Zinc Oxide Nanorods

Influence of immerse time on the properties of zinc oxide nanostructures

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