“…Besides, H, O, and Si have also been used for interstitial strengthening in some HEAs/MEAs, such as doping H into the Co 20 Cr 20 Fe 20 Mn 20 Ni 20 HEA, [108] O into the ZrTiHfNb 0.5 Ta 0.5 [109] and TiZrHfNb [110] HEAs, Si into the CoCrFeNi, [111] Co 0.2 CrAlNi, [112] and FeCoCrNiMn [113] HEAs, and multiple interstitials (containing at least two elements of B, C, N, and O) into certain HEAs. [114,115] Here, it should be pointed out that different from the dilatational stress field that have little interaction with screw dislocations caused by the addition of substitutional solutes, interstitial solutes generally cause a tetragonal distortion to the lattice, producing a shear field that strongly interacts with the edge, screw, and mixed dislocations. [74] Therefore, the interstitial strengthening is usually stronger than the substitutional strengthening in terms of strengthening effect.…”