A facile green approach to the synthesis of Bi2WO6@V2O5 heterostructure and their photocatalytic activity evaluation under visible light irradiation for RhB dye removal

Material design for converting an oxidative-type BiVO4 catalyst into a reductive BiV(S,O)4−x sulfo-oxide catalyst for nitrogen photoreduction to ammonia

“…Hence, our prepared BiVOS catalysts are semiconductors with a direct band gap. Compared with the E g values of BiVO 4 at 2.53 eV, Bi 2 S 3 at 1.38 eV, Bi 2 O 3 at 3.13 eV, and V 2 O 5 at 2.8 eV, 62 the E g values of 1.55–2.01 eV in this work further confirm that our prepared BiVOS catalysts are a solid solution in the form of BiV(O,S) 4 .…”

“…The test methodologies for apparent quantum efficiency (AQE) and the solar-to-ammonia (STA) conversion efficiency followed the descriptions in literature reports. 44–66 The detailed calculations for AQE and STA are listed in the ESI †…”

Bandgap Engineering and Enhancing Optoelectronic Performance of a Lead-Free Double Perovskite Cs2AgBiBr6 Solar Cell via Al Doping

“…This reduction in ' k ' may indicate a decrease in optical losses due to surface optical dispersion, an increase in carrier concentration, and reduced surface roughness. The optical characteristics of semiconductor materials can be described using the complex dielectric function (ε): ε = ε r + i ε i where ε r represents the real part, and ε i stands for the imaginary component of the dielectric constant, which are represented in terms of “ n ' and ' k ” as , : ε r = n 2 + k 2 ε i = 2 n k …”

“…where ε r represents the real part, and ε i stands for the imaginary component of the dielectric constant, which are represented in terms of "n' and 'k" as 42,77 :…”