A facile energy-saving route of fabricating thermoelectric Sb
            <sub>2</sub>
            Te
            <sub>3</sub>
            -Te nanocomposites and nanosized Te

Liu, En Yu; Lin, Fei Hung; Yang, Zihao; Liu, Chia‐Jyi

doi:10.1098/rsos.180698

Cited by 12 publications

(5 citation statements)

References 44 publications

(52 reference statements)

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“…In addition, sensitivity of their electronic structure to strain makes their TE properties highly tunable. [27] Experimentally and theoretically, ETT in Sb 2 Te 3 /Bi 2 Te 3 /Sb 2 Se 3 / Bi 2 Se 3 crystal indicated by Raman shift and the full width at half maximum (FWHM) of phonon modes has been studied by applying external pressure. [32][33][34][35] The phonon softening is reflected in the increase of FWHM.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Bi 2 Te 3 /Te heterostructure by PVD or Sb 2 Te 3 /Te heterostructure by solution synthesized were prepared to further enhance the TE properties. In these structures, PF was enhanced by filtering low energy carrier, and thermal conductivity was reduced by enhancing phonon scattering …”

Section: Introductionmentioning

confidence: 99%

“…The small band gap of TIs, and their vicinity to a metallic state associated with an ETT are responsible for their superior TE performance. In addition, sensitivity of their electronic structure to strain makes their TE properties highly tunable . Experimentally and theoretically, ETT in Sb 2 Te 3 /Bi 2 Te 3 /Sb 2 Se 3 /Bi 2 Se 3 crystal indicated by Raman shift and the full width at half maximum (FWHM) of phonon modes has been studied by applying external pressure .…”

Section: Introductionmentioning

confidence: 99%

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Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Chen

et al. 2019

Adv Elect Materials

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κ, κ e , κ L , and T are the Seebeck coefficient, electrical conductivity, total thermal conductivity, electrical thermal conductivity, lattice thermal conductivity, and absolute working temperature, respectively. [1,2] Since α, σ, and κ are strongly coupled with each other, a simple improvement in single parameter usually results in a deterioration of the others. The challenge of realizing superior TE properties lies in the improvement of ZT, that is, simultaneously increasing in power factor (PF = α 2 σ) and suppressing κ. Normally, α enhancement can be achieved by a carrier energy filtering effect, caused by band bending at the nanointerfaces between nanoparticle and TE host materials. [2-4] Meanwhile, reducing κ L by phonon scattering is an effective way to reduce κ while maintaining a high σ. Very recently, lattice strains regulated by annealing time have also been observed for remarkably decreasing κ without affecting the carrier mobility (µ). [3] Sb 2 Te 3 and its derivatives are considered to be one of the best p-type TE materials near room temperature. [5] Compared with its bulk counterparts, nanostructured Sb 2 Te 3 film provides promising possibilities for enhanced TE properties and potential applications in micro/nanoelectromechanical systems (MEMS/NEMS) TE device. [6] Experimentally, Sb 2 Te 3 has been prepared by various approaches such as physical vapor deposition (PVD), solid state reaction, and chemical synthesis method and so on. [1,7,8] The effect of substrate, annealing temperature, and thickness on PF as well as the strain-and grain size-dependent κ in Sb 2 Te 3 films was studied. [9-11] PF can be enhanced by introducing nanoscale metal/semimetals into

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Chen

et al. 2019

Adv Elect Materials

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“…where k B is the Boltzmann constant, σ is the electrical conductivity, and L 0 is the Lorenz number calculated using an algorithm called SPBcal within the framework of single parabolic band (SPB) model under an acoustic phonon scattering assumption [Eq. (8)]: [36][37][38][39]…”

Section: Temperature-dependent Thermoelectric Properties Of Cu 2à Y Smentioning

confidence: 99%

Energy‐Efficient Synthesis and High Thermoelectric Performance of α‐Cu_2−ySe_1−xTe_x

Lin

Liu

2021

ChemSusChem

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The high‐temperature phase of β‐Cu2Se always appears as the major phase for the reaction carried out using chemical solution methods. Here, a procedure was developed that could fabricate a single phase of α‐Cu2Se1−xTex (x=0.02 and 0.04) by room‐temperature aqueous synthesis using NaBH4 as reducing agent followed by cold pressing and sintering at 650 °C for 6 h in a flowing gas mixture of 20 % H2 and 80 % N2. The energy‐efficient synthesis carried out at room temperature abides by the 6th principle for green chemistry with less energy consumption. The reaction mechanism was studied, and evidence was provided of α‐Cu2Se being formed via the reaction between elemental Cu and Se atoms at room temperature. The resulting materials were characterized by powder X‐ray diffraction, field‐emission scanning electron microscopy, thermoelectric transport measurements, and Hall measurements. Cu1.96Se0.96Te0.04 had the highest power factor of 11 μW cm−1 K−2 at 818 K, and Cu2Se0.96Te0.04 had the maximum zT≥1.4 at T≥920 K among this series of materials.

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“…Nevertheless, increasing zT values presents challenges because these three factors are interconnected. Various strategies for optimizing zT values in single-phase compounds and multiphase composites include the introduction of nano- or micro-scale impurities, , nanostructuring, band engineering, , compositing, , organic/inorganic hybridization, , and more. An effective approach for improving zT values involves reducing thermal conductivity through the incorporation of nanometer-scale additives, rattlers, or possessing species with liquid-like behavior. , …”

Section: Introductionmentioning

confidence: 99%

Aqueous-Solution Synthesized p-Type Cu₂Se_0.96Te_0.04–xI_x/Cu₂O Composite and Thermoelectric Performance of TEG Made of 6 Pairs of p-Leg Cu₂Se_0.96Te_0.02I_0.02/Cu₂O Composite and n-Leg InSb_0.94Bi_0.06

Lourdhusamy,

Paulraj,

Liu

2024

Inorg. Chem.

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Cu2Se-based thermoelectric materials exhibit high dimensionless figure of merit (zT) values at elevated temperatures (900–1000 K) but relatively lower zT values at intermediate temperatures, approximately 500 K. We synthesized a series of polycrystalline Cu2Se0.96Te0.04–x I x /Cu2O composites (where x = 0.00, 0.01, 0.02, and 0.03) using an energy-efficient synthesis method conducted at room temperature, followed by heat treatment at 923 K for 6 h. X-ray diffraction (XRD) analysis confirmed the monoclinic crystal structure of the α phase. The introduction of iodine doping at Te sites introduced electron carriers to p-type Cu2Se0.96Te0.04, reducing the hole carrier concentration. Consequently, the electrical resistivity increased, and the thermopower exhibited a significant increase. The incorporation of electron carriers into the p-type Cu2Se0.96Te0.04/Cu2O composites resulted in an enhanced power factor within the medium-temperature range. Specifically, at 500 K, the Cu2Se0.96Te0.02I0.02/Cu2O (x = 0.02) composites demonstrated the highest power factor among the series of Cu2Se0.96Te0.04–x I x /Cu2O composites, measuring 9.1 μW cm–1 K–2. According to the weighted mobility analysis, it is clear that the x = 0.02 composite possesses the optimal carrier concentration, which accounts for its superior power factor compared to the other composites in the series. Furthermore, the Cu2Se0.96Te0.02I0.02/Cu2O composites and Cu2Se0.96Te0.04/Cu2O composites displayed zT values of 0.49 and 0.33, respectively, at 550 K. Additionally, iodine doping led to an enhancement in the average zT values between 450 and 550 K. Therefore, electron doping in p-type materials presents itself as a viable strategy for shifting the operating temperature of a thermoelectric device from high to medium temperature. We successfully fabricated a thermoelectric generator comprising 6 pairs of p-leg Cu2Se0.96Te0.02I0.02/Cu2O composites and n-leg InSb0.94Bi0.06. This TEG achieved impressive results, including a maximum output voltage, power output, power density, and efficiency of 0.115 V, 10.6 μW, 35.1 μW cm–2, and 1.74% at a temperature difference (ΔT) of 120 K.

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A facile energy-saving route of fabricating thermoelectric Sb ₂ Te ₃ -Te nanocomposites and nanosized Te

Cited by 12 publications

References 44 publications

Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Energy‐Efficient Synthesis and High Thermoelectric Performance of α‐Cu_2−ySe_1−xTe_x

Aqueous-Solution Synthesized p-Type Cu₂Se_0.96Te_0.04–xI_x/Cu₂O Composite and Thermoelectric Performance of TEG Made of 6 Pairs of p-Leg Cu₂Se_0.96Te_0.02I_0.02/Cu₂O Composite and n-Leg InSb_0.94Bi_0.06

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A facile energy-saving route of fabricating thermoelectric Sb 2 Te 3 -Te nanocomposites and nanosized Te

Cited by 12 publications

References 44 publications

Lattice Strain Enhances Thermoelectric Properties in Sb2Te3/Te Heterostructure

Lattice Strain Enhances Thermoelectric Properties in Sb2Te3/Te Heterostructure

Energy‐Efficient Synthesis and High Thermoelectric Performance of α‐Cu2−ySe1−xTex

Aqueous-Solution Synthesized p-Type Cu2Se0.96Te0.04–xIx/Cu2O Composite and Thermoelectric Performance of TEG Made of 6 Pairs of p-Leg Cu2Se0.96Te0.02I0.02/Cu2O Composite and n-Leg InSb0.94Bi0.06

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A facile energy-saving route of fabricating thermoelectric Sb ₂ Te ₃ -Te nanocomposites and nanosized Te

Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Lattice Strain Enhances Thermoelectric Properties in Sb₂Te₃/Te Heterostructure

Energy‐Efficient Synthesis and High Thermoelectric Performance of α‐Cu_2−ySe_1−xTe_x

Aqueous-Solution Synthesized p-Type Cu₂Se_0.96Te_0.04–xI_x/Cu₂O Composite and Thermoelectric Performance of TEG Made of 6 Pairs of p-Leg Cu₂Se_0.96Te_0.02I_0.02/Cu₂O Composite and n-Leg InSb_0.94Bi_0.06