2021
DOI: 10.1016/j.tsf.2021.138859
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A fabrication method for type-II Ge clathrate film by annealing of Ge film covered with Na layer

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Cited by 11 publications
(21 citation statements)
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“…However, synthesis of the type II Ge clathrate phase has been more elusive; this is because the traditional synthetic approach for type II Si clathrates, thermal decomposition of the Na 4 Si 4 Zintl phase under vacuum, , is more difficult for the Ge analogue (Na 4 Ge 4 ) and generally results in the formation of many phases (Figure ). Recently, the selective growth of the type II Ge phase via thermal decomposition has been accomplished with specially designed reactors or via thin-film growth methods. …”
Section: Introductionmentioning
confidence: 99%
“…However, synthesis of the type II Ge clathrate phase has been more elusive; this is because the traditional synthetic approach for type II Si clathrates, thermal decomposition of the Na 4 Si 4 Zintl phase under vacuum, , is more difficult for the Ge analogue (Na 4 Ge 4 ) and generally results in the formation of many phases (Figure ). Recently, the selective growth of the type II Ge phase via thermal decomposition has been accomplished with specially designed reactors or via thin-film growth methods. …”
Section: Introductionmentioning
confidence: 99%
“…The completely guest-free clathrate (Ge 136 ) has the highest formation energy and therefore should be harder to synthesize than the Na-filled clathrates. Indeed, to our knowledge, most previous attempts at synthesizing guest-free type II germanium clathrates have resulted in the formation of Na-filled clathrates ,, or low-Na/K content clathrates , as one of the major products along with other by-products. Special techniques such as the application of an electric field in an Ar environment, and chemical oxidation, or thermal decomposition in ionic liquid media were needed to obtain nearly guest-free type II Ge clathrates (δ ∼ 0 in Na δ Ge 136 ).…”
Section: Resultsmentioning
confidence: 99%
“…Understanding the mobility of guest atoms within clathrate structures is important not only for battery applications but also because the synthesis of some clathrates relies on the removal of these metals via thermal evaporation or oxidative deintercalation. , Our research group’s recently reported method for synthesizing type II germanium clathrate (Na 24−δ Ge 136 ) via solid-state electrochemical oxidation of the Zintl phase compound Na 4 Ge 4 showed that the products were temperature dependent, with the type II Ge clathrate forming at a relatively low temperature (300 °C), hexagonal Na 1– x Ge 3+ z at intermediate temperature (350 °C), and diamond cubic α-Ge at higher temperature (400 °C). However, to the best of our knowledge, none of the previous studies focused on understanding the mechanism of the precursor oxidation, and little attention has been paid to understanding how Na atoms are removed from the precursor that is used to synthesize the clathrates.…”
Section: Introductionmentioning
confidence: 99%
“…We note that recently a new fabrication method for type-II Ge clathrate film was proposed in Ref. [18]. The pressure-induced structural changes and behavior of Ge 136 on compression were studied in Ref.…”
Section: Introductionmentioning
confidence: 99%