A dual vertical Hall latch with direction detection

Stoica, Dan; Motz, Mario

doi:10.1109/esscirc.2013.6649110

Cited by 10 publications

(9 citation statements)

References 4 publications

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“…Recently, vertical Hall-effect devices (VHalls) have been attracting significant attention from the industry, because they allow one to measure the in-plane magnetic field components, i.e. the magnetic field components parallel to the chip surface (B x , B y ), whereas Hall plates -also called horizontal Hall-effect devices (HHalls) -respond to the magnetic field component orthogonal to the chip surface (B z ) [13,14]. A vast plurality of topologies was proposed for VHalls, yet one important group of VHalls comprises a single Hall tub with only three contacts on one side and a single mirror symmetry Fig.…”

Section: (2a) (2b)mentioning

confidence: 99%

“…These two resistances and the sheet resistance are not independent from each other. From [10] we use (14) and (15) into (5a) and we use (A15) from [5] to get L(4R sh / R H ) = k 1 2 with k 1 = (1 -tan α 1 ) / (1 + tan α 1 ). Again from [10] we plug (14) into (4b) to get R sh (1 / R H + 1 / (2R D )) = K'(k 1 ) / (2K(k 1 )).…”

Section: (8a) (8b)mentioning

confidence: 99%

“…The reason, why we can measure sheet resistance with van der Pauw technique is: the ratio R H / R D is accessible to electrical measurement and it depends only on the layout and not on the sheet resistance. From (6), (14), (15) in [10] and (A15) in [5] we derive the relation (10b) with λ = 2K(k 1 ) / K'(k 1 ). (10b) rises monotonously from 0 to 1 for λ: 0 → ∞.…”

Section: (10a)mentioning

confidence: 99%

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An Analytical Theory of Hall-Effect Devices with Three Contacts

Ausserlechner¹

2018

PHY

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Object:Vertical Hall-effect devices (VHalls) and split-drain MAG-FETs often have three contacts and a single mirror symmetry. We discuss the Equivalent Resistor Circuit (ERC) at small magnetic field, relate it to the electrical degrees of freedom, and compare it to traditional Hall plates with four contacts.Methods:In contrast to devices with four contacts, it is not possible to determine the sheet resistance of devices with three contacts by electrical measurements like the one of van der Pauw. However, for both types of devices, the output voltage over input current depends only on resistances of the ERC, the sheet resistance, and the Hall angle, irrespective of the exact shape of the devices and the size of the contacts.Result:This allows one to explore the maximum Signal-to-Noise Ratio (SNR) in a very general sense without consideration of any specific device geometry. It is shown how VHalls with all three contacts on the top face of the Hall tub can have electrical symmetry with maximum SNR.

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Section: (2a) (2b)mentioning

confidence: 99%

Section: (8a) (8b)mentioning

confidence: 99%

Section: (10a)mentioning

confidence: 99%

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An Analytical Theory of Hall-Effect Devices with Three Contacts

Ausserlechner¹

2018

PHY

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“…In [7] the authors describe vertical Hall devices and state of the art techniques to minimize offset and 1/f noise (spinning and chopping), optimize SNR by current biasing (stacking) and analog precompensation of the sensitivity`s stress dependence due to the Piezo-Hall effect.…”

Section: Compensation Principle Of Vertical Position Tolerancesmentioning

confidence: 99%

Compensation of Assembly Tolerances in Magnetic Current Sensors with External Conductor

Hegedűs

Ausserlechner

Strutz

2016

Period. Polytech. Elec. Eng. Comp. Sci.

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“…These devices are able to detect the magnetic field parallel to the main surface of a chip, whereas conventional Hall plates detect the magnetic field orthogonal to the main chip surface. Vertical Hall effect devices are attractive in cost sensitive mass markets for linear [4], rotational [5], and 3D position sensing in automotive, industrial, and home appliance applications.…”

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confidence: 99%

An Analytical Theory of the Signal-to-Noise Ratio of Hall Plates with Four Contacts and a Single Mirror Symmetry

Ausserlechner¹

2018

JAMP

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This work gives an analytical theory of the signal-to-thermal-noise ratio (SNR) of classical Hall plates with four contacts at small magnetic field. In contrast to previous works, the symmetry of the Hall plates is reduced to only a single mirror axis, whereby the average of potentials of the two output contacts off this mirror axis differs from the average of potentials at the two supply contacts on the mirror axis, i.e. the output common mode differs from 50%. Surprisingly, at fixed power dissipated in the Hall plate, the maximum achievable SNR is only 9% smaller for output common modes of 30% and 70% when compared to the overall optimum at output common modes of 50%. The theory is applied to Vertical Hall effect devices with three contacts on the top surface and one contact being the buried layer in a silicon BiC-MOS process. Geometries are found with large contacts and only a moderate loss in SNR.

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A dual vertical Hall latch with direction detection

Cited by 10 publications

References 4 publications

An Analytical Theory of Hall-Effect Devices with Three Contacts

An Analytical Theory of Hall-Effect Devices with Three Contacts

Compensation of Assembly Tolerances in Magnetic Current Sensors with External Conductor

An Analytical Theory of the Signal-to-Noise Ratio of Hall Plates with Four Contacts and a Single Mirror Symmetry

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