Abstract:A new dual-gate memory cell with two different inter-poly oxides is presented in this paper. This cell allows high density memory application and a cell programming only with the dual-gate without high bias on drain or source compared to standard electrical erasable and programmable read-only memory (EEPROM). Concept has been validated in an EEPROM standard technology from STMicroelectronics and allows a cell area reduction of above 48%. The specificity is to use a dual-gate to program the cell with two differ… Show more
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