2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) 2015
DOI: 10.1109/rfic.2015.7337720
|View full text |Cite
|
Sign up to set email alerts
|

A dual band (2G/5G) IEEE 802.11b/g/n/ac 80MHz bandwidth AMAM envelope feedback power amplifier with digital pre-distortion

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
5
1
1

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(3 citation statements)
references
References 5 publications
0
3
0
Order By: Relevance
“…The value 𝑣 π‘œπ‘’π‘‘ 1,2 in (11) is the voltage at the drain of CG at stage-1/2 that is fed to one end primary port of the transformer. The 𝑣 𝑖𝑛 1,2 is the input voltage at the gate of the CS amplifier (which is represented by 𝑣 𝑖𝑛 in Fig.…”
Section: Impedance and Gainmentioning
confidence: 99%
See 1 more Smart Citation
“…The value 𝑣 π‘œπ‘’π‘‘ 1,2 in (11) is the voltage at the drain of CG at stage-1/2 that is fed to one end primary port of the transformer. The 𝑣 𝑖𝑛 1,2 is the input voltage at the gate of the CS amplifier (which is represented by 𝑣 𝑖𝑛 in Fig.…”
Section: Impedance and Gainmentioning
confidence: 99%
“…Efficiency is a key parameter for WLAN applications, even though switching PAs offers better efficiency, they don't offer the required linearity. Class-AB/B is PAs are extensively adopted due to their superior linearity 10,11,12,13 . The popular technique to enhance the linearity is to suppress the 2 𝑛𝑑 , 3 π‘Ÿπ‘‘ harmonics using LC techniques, use Digital Pre-Distortion (DPD) to reduce AM-PM deviation and adapt active feedback linearizer which has the complementary characteristic to the main amplifier.…”
Section: Introductionmentioning
confidence: 99%
“…III-V technologies, such as GaAs and GaN, are widely used for high-power and high-efficiency PAs for the Sub-6GHz band due to high electron mobility and high breakdown voltage [2,3,4,5,6]. By contrast, Si-based processes are attractive for their ease of integration and low cost [7,8,9]. However, it is fairly challenging to improve the linearity of Si-based PAs.…”
Section: Introductionmentioning
confidence: 99%