A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

Cai, Minxi; Yao, Rihui

doi:10.1016/j.sse.2017.11.007

Cited by 8 publications

(3 citation statements)

References 31 publications

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“…When the average height and variation are, respectively, 50-100 meV and 10-30 meV, the model reproduces measured Hall mobility of a-IGZO films over a wide range of carrier-electron density and temperature. 26,27) The result indicates that the percolation model is the most appropriate for describing the transport properties of AOSs. Because the model is based on the Boltzmann transport equation, it is not easily implemented in device simulators.…”

Section: Mobility Modelmentioning

confidence: 94%

“…20,21) They are different from those of well-known conventional semiconductors like c-Si. 22) As physical models to describe the AOS carrier-electron transport, a multiple trap-release (MTR) mobility model with subgap states, 23,24) a mobility model with carrier scatterings by ionized defects, 7,25) and a percolation transport model 26,27) have been proposed.…”

Section: Mobility Modelmentioning

confidence: 99%

See 1 more Smart Citation

Device modeling of amorphous oxide semiconductor TFTs

Abe¹,

Ota²,

Kuwagaki³

2019

Jpn. J. Appl. Phys.

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Device models of amorphous oxide semiconductor thin-film transistors (AOS TFTs) associate AOS carrier transport and electronic states with AOS TFT electrical characteristics. Thus, such models are very useful for estimation and analysis on operations and reliability of AOS TFTs and developments of electronic devices with AOS TFTs. We discuss the models including mobility models and density of subgap state (DOS) models, which reflect the carrier-electron transport and the electronic states of AOSs. A device simulator employing a carrier-electron density dependent mobility model and an appropriate DOS model can reproduce temperature and electrical characteristics of AOS TFTs.

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Section: Mobility Modelmentioning

confidence: 94%

Section: Mobility Modelmentioning

confidence: 99%

Device modeling of amorphous oxide semiconductor TFTs

Abe¹,

Ota²,

Kuwagaki³

2019

Jpn. J. Appl. Phys.

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“…Due to the limited availability of indium, there has been a growing interest in In-free alternatives to InGaZnO. Several materials with promising properties, such as GaSnZnO and SnZnO, have been reported [6][7][8]. Although AOSs offer very interesting properties, long term stability of devices based on AOSs is still an issue.…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics

et al. 2019

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Amorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thus suitable for flexible transparent electronics such as flexible displays, thin-film transistors, and sensors. In magnetron sputtering the energy input into the growing film can be controlled by the plasma conditions instead of the substrate temperature. Here, we report on magnetron sputtering of InGaZnO (IGZO) and ZnSnO (ZTO) with a focus on the effect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited a resistivity of about 2 × 10−2 Ohm∙cm and an electron mobility of 18 cm2∙V−1∙s−1. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.

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A semiphysical current–voltage model with a contact ideality factor for disordered thin-film transistors

Lee

2018

J Comput Electron

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A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

Cited by 8 publications

References 31 publications

Device modeling of amorphous oxide semiconductor TFTs

Device modeling of amorphous oxide semiconductor TFTs

Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics

A semiphysical current–voltage model with a contact ideality factor for disordered thin-film transistors

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