A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact

Cohen-Elias, D.; Kraus, S.; Cohen, Shimon; Gavrilov, A.; Ritter, D.

doi:10.1109/ted.2011.2142186

Cited by 4 publications

(4 citation statements)

References 16 publications

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“…The design of track and hold switches is benefited of using high speed base-collector (BC) diodes rather than base-emitter (BE) in the form of switched emitter follower stages for the following reasons: 1) Fast HBTs in this technology are fabricated using thin and highly doped BE junctions which degrades the break-down voltage [6], [7]. 2) The time constant of R on C of f (where R on is the forward bias resistance of the diode and C of f is the depletion region capacitance) in the BE diode is much larger than the one in the BC diode which makes the BC diode a faster switch.…”

Section: Track and Hold Amplifier Designmentioning

confidence: 99%

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

Daneshgar

Griffith

Rodwell

2012

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 µm InP HBT technology. High speed switching functionality in the amplifier is achieved using base-collector diodes rather than switched-emitter-followers (SEF). Operating with −5 V and −2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of −30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.

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Section: Track and Hold Amplifier Designmentioning

confidence: 99%

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

Daneshgar

Griffith

Rodwell

2012

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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“…13,14 Beyond these applications, TJs have also demonstrated utility in transistor structures, exemplified by tunnel transistors, 15 delta-doped tunnel field effect transistors (FETs), 16 tunnel-source FETs, 17 and heterojunction bipolar transistors with degenerately doped emitters. 18 The development of high-performance, high-bandgap TJs assumes paramount significance in realizing efficient multijunction solar cells (MJSC). 19,20 The world-record six-junction solar cell with an efficiency of 47.1% under 143 suns concentration is only made possible by the five TJs that electrically connect adjacent subcells.…”

Section: Introductionmentioning

confidence: 99%

“…Over time, the repertoire of materials for TJs expanded to include Si, Si/Ge, , GaAs, − GaAsP, − and InGaP/AlGaAs . This diversification corresponds to the myriad of applications, ranging from their role in mitigating semiconductor laser resistance , to the development of innovative structures like spin-injection light-emitting diodes, long-wavelength vertical-cavity surface-emitting lasers, and tunnel-injection transit time effect diodes. , Beyond these applications, TJs have also demonstrated utility in transistor structures, exemplified by tunnel transistors, delta-doped tunnel field effect transistors (FETs), tunnel-source FETs, and heterojunction bipolar transistors with degenerately doped emitters …”

Section: Introductionmentioning

confidence: 99%

1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells

Madarang,

Chu,

Kim

et al. 2024

ACS Appl. Opt. Mater.

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Thermally stable and optically transparent 1.65−1.72 eV III−V tunnel junctions (TJ) are necessary for interconnecting III−V/Si tandem cells. In this study, we systemically investigate the performance of p-Al 0.18 Ga 0.82 As/n-GaAs QW/n-Al 0.18 Ga 0.82 As TJs with cladding layers grown under various growth conditions before and after thermal annealing. TJs grown using Si dopant revealed poor tunneling current under all growth conditions studied, even prior to thermal load. We replaced Si with Te and achieved peak current densities of 1900 mA/cm 2 , which plummeted to 27 mA/cm 2 after extensive annealing at 600 °C for 90 min. By introducing two spikes of Te δ-doping with 8% surface coverage, along with optimizations in growth temperature, doping, and Al content in cladding layers, we achieved a further enhanced peak current density of 82 100 mA/cm 2 for as-grown devices which is 5 orders of magnitude higher compared to Si-doped TJs. After thermal annealing, the TJ demonstrated a peak current density of 464 mA/cm 2 , which significantly exceeds the requirements for III−V/Si tandem cells under 1 sun operation. As a proof of concept, we fabricated 1.65 eV AlGaAs solar cells grown with either Si or Te δ-doped TJ and show that Te δ-doping is a key approach for AlGaAs TJ devices. This result is useful not only for monolithically integrated III−V/Si tandem solar cells but also for high-performance light-emitting devices with low electrical resistance.

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“…Structures such as a spin-injection light-emitting diode [25] and a tunnel-injection transit time effect diode (TUNNETT) [26][27][28][29] have also been reported. Tunnel junctions have been used in transistor structures, such as tunnel transistors [30], tunnel-source field-effect transistors (FETs) [31], δ-doped tunnel FETs [32], heterojunction bipolar transistors (HBTs) with a degenerately doped emitter [33], and ideal static-induction transistors (ideal SITs) [34][35][36].…”

Section: Introductionmentioning

confidence: 99%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

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In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm −2 . They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

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A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact

Cited by 4 publications

References 16 publications

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

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A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact

Cited by 4 publications

References 16 publications

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 &#181;m InP HBT Technology

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 &#181;m InP HBT Technology

1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

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A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology