A dose rate independent pMOS dosimeter for space applications

Schwank, J.R.; Roeske, S.B.; Beutler, D.E.; Moreno, Daniel; Shaneyfelt, M.R.

doi:10.1109/23.556852

Cited by 40 publications

(10 citation statements)

References 17 publications

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“…Threshold voltage shifts can occur in these cells due to several mechanisms. Trapping of radiation-induced charge in the nitride storage layer can take place, even though both holes and electrons tend to be trapped, compensating each other, due to the large number of both electron and hole traps available in [123], [124]. Yet a large literature exists on nitride layers, which are used also in dosimeters, and a few studies [125] assume a non-zero net trapping in .…”

Section: B Charge Trap Memoriesmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

138

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We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.Index Terms-Ferroelectric devices, flash memory, magnetoresistive devices, nonvolatile memory, phase change memory, radiation effects. I. OVERVIEWN ON-VOLATILE memories (NVMs) are used in a variety of space applications, as data or code memories, and are increasingly needed for future missions. This paper will discuss the technologies and devices available for non-volatile storage in the mainstream and in the rad-hard market, with a strong attention to the radiation sensitivity, which is of primary importance for harsh environments such as space.The work is organized as follows: we will first introduce the basic definitions and metrics concerning NVMs, then explore and compare the major storage concepts. In particular, charge-based, phase-change, ferroelectric, and magnetoresistive memories will be presented, with emphasis on density, performance, reliability, and radiation sensitivity. Architectural information concerning the array organization and peripheral circuitry will be given, highlighting known radiation issues and critical building blocks. A. Key Definitions and MetricsA non-volatile memory is a memory that retains information when powered off. Different terms are used to indicate the act of storing a digital value in a non-volatile memory bit, depending on the memory type and architecture. In charge-based storage, the terms program and erase are used to indicate the injection of Manuscript negative charge into and its removal from (or injection of positive charge into) the charge storage element, respectively. In the context of phase change memories, the terms set and reset are used to indicate the operations leading to the crystallization and amorphization of the phase-change material. For other memories, such as ferroelectric or magnetic, the term write is simply used, as for SRAMs and DRAMs. The association of these operations and terms with the stored digital value ("0" or "1") is arbitrary. In the following we will stick to the conventions most commonly used for each memory type.In addition to familiar parameters such as speed, power consumption, and density, two additional metrics are of main importance for non-volatile memories: retention and endurance. This is because wear-out is usually much stronger in non-volat...

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Section: B Charge Trap Memoriesmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

138

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“…However, as discussed previously, the experimentally observed threshold-voltage shifts do not show a strong dependence on the nitride thickness for the 5 nm oxide and 10 nm oxide samples considered here. In other work, it was reported that charge generated within the nitride layer does not contribute to a measurable threshold voltage shift [6]. Here, is assumed to be sub-linearly proportional to the nitride thickness: where…”

Section: Model For Total Dose Effectsmentioning

confidence: 98%

“…In contrast to this, total dose effects at cryogenic temperature in composite films with oxide thicknesses of 8.5 nm to 60 nm were explained by considering only generation of free carriers in the oxide and their subsequent trapping after transport due to the applied field [4]. Also, the radiation-induced mid-gap voltage or threshold voltage shift have been explained by considering charge trapping at NO or oxide-silicon interfaces [5], [6]. In this paper, total dose effects on composite NO films with thicknesses suitable for power MOSFET applications are studied.…”

Section: Introductionmentioning

confidence: 99%

Total dose effects in composite nitride-oxide films

Lee¹,

Raparla²,

Li³

et al. 2000

IEEE Trans. Nucl. Sci.

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Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses.

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“…The field-effect-transistor-based dosimeters in which the threshold voltage shift is a quantitative indicator of the absorbed dose are now widely used due to their simplicity, low cost, low power consumption, and compatibility with the CMOS technology [1]. The devices used in dosimetry are typically the p-channel MOS or p-MNOS (Metal -Nitride -Oxide -Semiconductor) [2,3] transistors (RADFETs). The design of the RADFETs encounters with the challenges in ensuring of stability and reproducibility of their radiation and electrical characteristics at different radiation and environmental conditions.…”

Section: Introductionmentioning

confidence: 99%

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

Zimin

Mrozovskaya

Chubunov

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both effects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for different total doses and irradiation conditions. It has been found the used electric and radiation models qualitatively and semi-quantitatively describe the observed dependencies of the RADFETs' sensitivity on dose rates and irradiation temperatures for the devices with different thickness of insulators.

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A dose rate independent pMOS dosimeter for space applications

Cited by 40 publications

References 17 publications

Present and Future Non-Volatile Memories for Space

Present and Future Non-Volatile Memories for Space

Total dose effects in composite nitride-oxide films

Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

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