A Digitally Calibrated Bandgap Reference With 0.06% Error for Low-Side Current Sensing Application

Vulligaddala, Veeresh Babu; Adusumalli, Ravikumar; Singamala, Sudhakar; Srinivas, M.B.

doi:10.1109/jssc.2018.2859984

Cited by 18 publications

(10 citation statements)

References 8 publications

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“…Effective and simple high-order temperature compensation methods have thus become the norm for optimized circuit design. The curvature-compensation methods reported in the literature [ 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 ] further offset the temperature nonlinearity of the emitter–base voltage (V EB ). The topologies in [ 13 ] combine opposing curvature characteristics produced by the two BGR cores to achieve the reference voltage.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the on-chip calibration or trimming structure after production is important to ensure accuracy. The BGR circuits in [ 14 , 16 ] were designed specifically for battery management applications; specifically, the switched-capacitor bandgap reference in [ 14 ] and its high-order compensation are achieved by replacing the analog circuitry with a more sophisticated digital correction algorithm [ 15 ]. The internal temperature sensor and a lookup table will incur additional cost.…”

Section: Introductionmentioning

confidence: 99%

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A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications

Zhu

Liu

et al. 2022

Micromachines

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This work presents a high-precision high-order curvature-compensated bandgap voltage reference (BGR) for battery monitoring applications. The collector currents of bipolar junction transistor (BJT) pairs with different ratios and temperature characteristics can cause greater nonlinearities in ΔVEB. The proposed circuit additionally introduces high-order curvature compensation in the generation of ΔVEB, such that it presents high-order temperature effects complementary to VEB. Fabricated using a 0.18 µm BCD process, the proposed BGR generates a 2.5 V reference voltage with a minimum temperature coefficient of 2.65 ppm/°C in the range of −40 to 125 °C. The minimum line sensitivity is 0.023%/V when supply voltage varies from 4.5 to 5.5 V. The BGR circuit area is 382 × 270 μm2, and the BMIC area is 2.8 × 2.8 mm2.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications

Zhu

Liu

et al. 2022

Micromachines

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“…A feedback loop is introduced to switch‐off the current injection 27 . In type‐3 SUPCs, the inverter is replaced by a POR generator, based on a current generator mirroring the bias current of the bandgap core 28 . It is worth noticing that SUPCs of the first type exhibit a significant dependence of the inverter threshold with the supply voltage, whereas in type‐2 SUPCs the start‐up current increases with the supply voltage.…”

Section: Introductionmentioning

confidence: 99%

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Caselli

Liempd

Boni

et al. 2021

Circuit Theory & Apps

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Summary The paper describes the implementation of a bandgap reference based on native‐MOSFET transistors for low‐power sensor node applications. The circuit can operate from −55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military‐aerospace applications, and for direct Li‐Ion battery attach. Moreover, the circuit can operate without any dedicated start‐up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55‐nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample‐to‐sample variation within 57 mV, with a current consumption of 420 nA at 27°C.

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“…The need for accurate references constrained by low voltage (<1 V), current, and power allowances (<1 nW) has spurred a variety of calibration techniques to achieve BGR curvature correction [2,3] and poly and metal-shunt resistor trimming [4,5] by means of dynamic error correction methods [5], digitally assisted [6,7], programmable [8,9], or otherwise. A representative sample of the state-ofthe-art for such methods and diversity of applications thereof [2][3][4][5][6][7][8][9][10][11][12][13] can be found in Table A1 (see Appendix 2).…”

Section: Introductionmentioning

confidence: 99%

Thermal synergies in 50 nanometer CMOS and below

Shoucair

2021

IET Circuits, Devices & Syst

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An analysis of the metal oxide semiconductor field effect transistor (MOSFET) in strong inversion indicates two bias regions, in each of its triode and saturation conditions, whose distinct properties are elaborated and shown to lead to simple, systematic, design procedures for achieving low temperature coefficient (TC) voltages (<�100 ppm/°C) and currents (<�400 ppm/°C) in standard complementary metal oxide semiconductor (CMOS) processes over wide temperature spans (-55°C to þ163°C). The method involves combining devices with the same polarity (e.g. n-channel MOSFETs in p-well processes and vice versa) in a judicious manner suggested by theory, which side-steps the need for disparate elements such as resistors, diodes, and bipolar transistors, whose thermal variations are more difficult to model and offset mutually; the more so, the wider the temperature range. The close agreement between analysis and simulations (BSIM4) is illustrated by representative circuit design examples embodying the proposed principles. The concepts set forth offer advantages as generally accrue from design simplification and reduced circuit complexity; they are scalable as industrial silicon CMOS processeswhich are not optimised for extended thermal operation-evolve below 50 nm, and suitable to other technologies which find applications in the automotive, aviation, aerospace, energy, and geophysical sensing sectors, among others, such as silicon carbide, wherein MOSFETs can operate above 300°C. Et ignem regunt numeri (Plato) [1]. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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A Digitally Calibrated Bandgap Reference With 0.06% Error for Low-Side Current Sensing Application

Cited by 18 publications

References 8 publications

A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications

A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications

A low‐power native NMOS‐based bandgap reference operating from −55°C to 125°C with Li‐Ion battery compatibility

Thermal synergies in 50 nanometer CMOS and below

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