2019
DOI: 10.1016/j.ijplas.2019.02.003
|View full text |Cite
|
Sign up to set email alerts
|

A diffusion, oxidation reaction and large viscoelastic deformation coupled model with applications to SiC fiber oxidation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
6
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 27 publications
(6 citation statements)
references
References 61 publications
0
6
0
Order By: Relevance
“…Furthermore, the introduction of the diffusion parameter prohibits the entrance of O 2 molecules into the fibers, which not only satisfies the real physical processes but also realizes the automatic capture of the reaction interface during the calculation process. It is assumed that the SiC material oxidation reaction rate linearly depends upon the concentration of the reactant 25 : ξfbadbreak=RfcO2cSiC\begin{equation}{\xi _f} = {R_f}{c_{{O_2}}}{c_{SiC}}\end{equation}where ξf${\xi _f}$ is the reinforcement material oxidation rate, and R f is the oxidation reaction rate constant of the reinforcement material, which satisfies the Arrhenius equation: Rfbadbreak=Rf0exp()QfξRT\begin{equation} {R_f} = {R_{f0}}\exp \left(\frac{{ - {Q_{f\xi }}}}{{RT}}\right)\end{equation}where Rf0,Qfς${R_{f0}},{Q_{f\varsigma }}$ are the pre‐exponential coefficient and activation energy of the reinforcement material oxidation reaction, respectively. The mass conservation equations of O 2 molecules and SiC in the reinforcement elements are: CO2tbadbreak=·jO2goodbreak−32ξf\begin{equation}\frac{{\partial {C_{{O_2}}}}}{{\partial t}} = - \nabla \cdot {{\bm j}_{{O_2}}} - \frac{3}{2}{\xi _f}\end{equation} CSiCtbadbreak=ξf\begin{equation}\frac{{\partial {C_{SiC}}}}{{\partial t}} = - {\xi _f}\end{equation}…”
Section: Models and Computational Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Furthermore, the introduction of the diffusion parameter prohibits the entrance of O 2 molecules into the fibers, which not only satisfies the real physical processes but also realizes the automatic capture of the reaction interface during the calculation process. It is assumed that the SiC material oxidation reaction rate linearly depends upon the concentration of the reactant 25 : ξfbadbreak=RfcO2cSiC\begin{equation}{\xi _f} = {R_f}{c_{{O_2}}}{c_{SiC}}\end{equation}where ξf${\xi _f}$ is the reinforcement material oxidation rate, and R f is the oxidation reaction rate constant of the reinforcement material, which satisfies the Arrhenius equation: Rfbadbreak=Rf0exp()QfξRT\begin{equation} {R_f} = {R_{f0}}\exp \left(\frac{{ - {Q_{f\xi }}}}{{RT}}\right)\end{equation}where Rf0,Qfς${R_{f0}},{Q_{f\varsigma }}$ are the pre‐exponential coefficient and activation energy of the reinforcement material oxidation reaction, respectively. The mass conservation equations of O 2 molecules and SiC in the reinforcement elements are: CO2tbadbreak=·jO2goodbreak−32ξf\begin{equation}\frac{{\partial {C_{{O_2}}}}}{{\partial t}} = - \nabla \cdot {{\bm j}_{{O_2}}} - \frac{3}{2}{\xi _f}\end{equation} CSiCtbadbreak=ξf\begin{equation}\frac{{\partial {C_{SiC}}}}{{\partial t}} = - {\xi _f}\end{equation}…”
Section: Models and Computational Methodsmentioning
confidence: 99%
“…Furthermore, the introduction of the diffusion parameter prohibits the entrance of O 2 molecules into the fibers, which not only satisfies the real physical processes but also realizes the automatic capture of the reaction interface during the calculation process. It is assumed that the SiC material oxidation reaction rate linearly depends upon the concentration of the reactant 25 :…”
Section: Oxidation and Diffusion Model For The Reinforcement Materialsmentioning
confidence: 99%
“…Considering that different SiNW arrays were presented, we suggest that rat-IBE combined with thermal oxidation can be applied to different nanowire structures for sharpening purposes. We also would like to mention that numerical modeling of the 3D growth of the t-SiO 2 may answer the question of whether there is a significant influence of the internal angle on the film growth, where recent models considering fully coupled chemo-mechanical interaction might prove beneficial [67,[74][75][76]. A correct model may facilitate the choice of a temperature where oxidation self-limits at the desired diameter, taking the initial pre-shaped SiNC top diameter as an input.…”
Section: Influence Of the Mask Patternmentioning
confidence: 99%
“…Currently, continuum electro-chemomechanics theories for energy storage materials in the literature have been largely developed for diffusion of a conserved species across the host (i.e. no chemical reactions) [67][68][69][70][71], with some recent efforts capturing diffusion-reaction in solids [72][73][74]. While rigorous, current diffusion-reaction-deformation frameworks do not consider transport of charged species across the host in the presence of electric field, and thus are limited to modeling chemical rather than electro-chemical reactions.…”
Section: Introductionmentioning
confidence: 99%