A differential class‐E power amplifier with dynamic body bias technique

Du, Jian‐Chang; Wang, Zhigong; Xu, Jun; Chen, Xi; Qin, Tang‐Zhen

doi:10.1002/mop.32041

Cited by 5 publications

(7 citation statements)

References 8 publications

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“…Previous studies on an amplifier design show that the body biasing control can affect the speed of the turn-on or turn-off of the core transistor in the amplifier based on the change in the threshold voltage depending on the bias voltage [14], [16]. The results of the previous studies cannot be applied to the case of the detector core because the detector core responds to the low-powered input signal, which is higher than the maximum operating frequency (fmax) of the device.…”

Section: A Theoretical Analysismentioning

confidence: 99%

“…A common source configuration with control of the body bias voltage has been reported in the CMOS amplifier design [14]- [16]. Previous studies have presented amplifier designs with improved performances by applying a bodybias voltage, which is not the same as the source bias or ground, and utilizing the characteristics of a metal−oxide−semiconductor field−effect transistor (MOSFET) depending on the change in threshold voltage through the body bias.…”

Section: Introductionmentioning

confidence: 99%

“…A reverse bias voltage by which the amplifier efficiency can increase as the turn-off speed increases in the switching operation and the sub-threshold current decreases to reduce the power consumption has been studied [14]. The efficiency of the amplifier can be improved using a forward body bias because the turn-on speed and the on-resistance of the switching transistor are increased by decreasing the threshold voltage [16]. In addition, it has been reported that the performance of the square-law detector implemented using the HEMT can be improved by changing the sub-threshold slope owing to the body bias control [17].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

Han

Yang

2020

IEEE Access

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A complementary metal-oxide-semiconductor (CMOS) plasmon detector using metaloxide-semiconductor field-effect transistors (MOSFETs) biased at three different body voltages is proposed for high sensitivity and a wide dynamic range. The detection core consists of three differential MOSFET detectors biased at different body voltages based on the photoresponse variation depending on the body potential. The sensitivity of the proposed detector is improved through an increase in the nonlinearity owing to the uses of transistors biased by negative body voltages, and the dynamic range of the detector is widened through the parallel-connected detectors individually biased at different body voltages. A 200-GHz signal is simultaneously incident to the detection cores configured in-parallel through the integrated differential antenna, and DC voltages converted using the different photoresponsivity of the cores are current-combined at the preamplifier and amplified with a three-stage folded-cascode operational amplifier. Simulation and measurement results of the proposed detector designed using TSMC 0.25-µm CMOS technology show that the negative body-biasing (set to 0, −0.2, and −0.4 V), in the MOSFET can improve the voltage responsivity of 2.63 times, the sensitivity by 2.9-fold compared to zero body-biasing, reaching a dynamic range of 11.1% in the CMOS plasmon detector. Raster-scanned imaging for 60-µm thick copper tapes with a line width of 6−12 mm attached to 10-mm thick Styrofoam demonstrates that the signal-to-noise ratio of 200-GHz images can be improved from 25.5 dB to 30.6 dB when using the proposed detector with three different body-biased MOSFETs.

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Section: A Theoretical Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

Han

Yang

2020

IEEE Access

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“…Especially for the radio frequency (RF) power amplifier (PA), the related performances as efficiency, bandwidth, and so on, which has a very important impact on the signal transmission quality of the communication system. Recently, many highefficiency switch-mode PAs have been reported, for example, class-E, [3][4][5] class-F, [6][7][8] and inverse class-F. [9][10][11] In theory, their efficiency can reach 100% by shaping the voltage and current waves, but their bandwidth is very narrow. To expand the bandwidth of the PAs, a series of continuous mode PAs have been proposed and proven.…”

Section: Introductionmentioning

confidence: 99%

Design of a broadband bandpass filtering power amplifier for 5G communication

Jian

Liu

Cheng

2022

Micro & Optical Tech Letters

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This paper presents a broadband power amplifier (PA) based on a bandpass filtering (BPF) matching network. Terminated coupled line structure (TCLS) is employed to realize the broadband BPF matching network and ensure high selectivity, which also can achieve impedance transformation for PA. In addition, a harmonic control network is added in front of the TCLS to improve the efficiency of PA. To verify the effectiveness of the proposed method, a broadband bandpass filtering PA is designed and fabricated. The measured results show that the output power is from 39.5 to 41.6 dBm and the drain efficiency is between 58.8% and 72% in 3.3–3.7 GHz. These superior performances illustrate that the implemented filtering power amplifier can be applied well in 5G communication.

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“…In communication systems, Radio Frequency (RF) Power Amplifier (PA) is a key module of a transmitter. Therefore, it has been extensively studied for several eras [1][2][3]. The RF signal is fed to PA through an RF mixer for amplification, and then PA sends the amplified signal to the antenna through a band pass filter [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

A Modified Design of Class-E Power Amplifier with Balanced FETs and High Output Power for RFID Applications

Zahid

Jiang

Lü

et al. 2021

Proc. eng. technol. innov.

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In Radio Frequency (RF) communication, a Power Amplifier (PA) is used to amplify the signal at the required power level with less utilization of Direct Current (DC) power. The main characteristic of class-E PA is sturdy nonlinearity due to the switching mode action. In this study, a modified design of class-E PA with balanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and high output power for Electronic Article Surveillance (EAS) Radio Frequency Identification (RFID) application is presented. MOSFETs are adjusted to have high output performance of about 80% for RFID-based EAS system. A matching network is also proposed for accurate matching because there are differences in the behavior between RF waves and low frequency waves. The design of a matching network is a tradeoff among the complexity, adjustability, implementation, and bandwidth for the required output power and frequency. The implemented PA is capable of providing 44.8 dBm output power with Power-Added Efficiency (PAE) of 78.5% at 7.7 MHz to 8.7 MHz.

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A differential class‐E power amplifier with dynamic body bias technique

Cited by 5 publications

References 8 publications

CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

CMOS Plasmon Detector With Three Different Body-Biasing MOSFETs

Design of a broadband bandpass filtering power amplifier for 5G communication

A Modified Design of Class-E Power Amplifier with Balanced FETs and High Output Power for RFID Applications

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